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The BF908WR,115 is an N-channel dual-gate MOS-FET manufactured by NXP Semiconductors. It is a plastic LDMOS power transistor designed for base station applications operating at frequencies from 700 MHz to 2700 MHz. The device features high efficiency, excellent ruggedness, and broadband operation capabilities with integrated ESD protection.
Verify the specific suffix '115' against official NXP documentation to confirm packaging details. Confirm current availability status as component lifecycles may change. Ensure compatibility with existing RF design parameters before procurement.
Select this component for high-frequency base station amplifiers requiring robust LDMOS technology. Evaluate thermal stability and power gain requirements against application needs. Consider the integrated ESD protection for system reliability in harsh environments.
This part belongs to NXP's portfolio of RF power transistors. It is specifically engineered for wireless communication infrastructure. The dual-gate configuration allows for precise control in high-frequency signal amplification tasks typical in modern cellular networks.
Check for direct cross-references in NXP's RF Manual. Verify pinout and electrical characteristics match exactly. No alternative part numbers are confirmed in the provided data.