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The BF909,235 is an enhancement-type N-channel RF MOSFET manufactured by NXP USA Inc. It is housed in a plastic surface-mount SOT143B package with four leads and a 1.9 mm pitch. The device is designed for radio frequency applications, operating at frequencies up to 800 MHz. Key electrical specifications include a drain-source voltage of 7 V and a continuous drain current rating of 40 mA. The component features a dual-gate architecture suitable for amplifier circuits.
Verify the specific ordering suffix against the official NXP datasheet to ensure the correct package variant (SOT143 vs SOT143R) and tape/reel configuration. Confirm that the manufacturer designation matches NXP Semiconductors or its authorized entities. Request the original data sheet to validate electrical parameters and mechanical dimensions before integration into designs.
Select this component when a dual-gate N-channel RF MOSFET is required for frequencies around 800 MHz. Ensure the design accommodates the 7 V drain-source voltage limit and 40 mA current rating. Consider the SOT143B footprint for PCB layout constraints. Verify thermal management requirements based on the 200 mW power dissipation capability specified in the documentation.
The BF909 belongs to NXP's portfolio of RF transistors intended for micro-miniature applications. It utilizes an enhancement-type field-effect transistor structure. The device is distinct from standard logic-level MOSFETs due to its specialized dual-gate configuration and RF-optimized characteristics. It serves as a building block for analog RF front-end modules.
Consult the official NXP replacement guide for direct substitutes. Generic cross-references may not match the dual-gate RF characteristics. Verify pin compatibility and electrical limits if considering alternative manufacturers.