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The BF909A,215 is an N-channel dual-gate MOSFET designed for RF small-signal applications in the VHF and UHF bands. Manufactured by NXP Semiconductors, this silicon device operates with a supply voltage of 5 V and features a plastic microminiature SOT143R surface-mount package. It integrates an amplifier MOS-FET with source and substrate interconnected, alongside an internal bias circuit to ensure superior cross-modulation performance during automatic gain control (AGC). The component supports frequencies up to 1 GHz with low noise characteristics.
Verify the specific suffix
Select the BF909A,215 when designing VHF/UHF circuits requiring a dual-gate MOSFET with integrated biasing for AGC stability. Ensure the design accommodates the SOT143R package dimensions and 5 V supply requirements. Confirm that the operating frequency range aligns with the device's 1 GHz limit and that low noise performance is critical for the application signal chain.
This component belongs to NXP's portfolio of RF small-signal transistors. It is part of the BF909 series, which includes variants like the BF909 and BF909AR. These devices are engineered for high-frequency analog applications where linearity and noise performance are paramount, distinguishing them from standard switching or general-purpose logic transistors.
The BF909A,215 is functionally compatible with other BF909 series variants such as BF909, BF909AR, and BF909AWR. Verify pinout compatibility and specific electrical parameter tolerances before substituting, as variations may exist between different manufacturing revisions or sub-types within the family.