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The BF909AR,215 is an N-channel dual gate MOS-FET manufactured by NXP Semiconductors. It is an enhancement type field-effect transistor housed in a plastic microminiature SOT143R package. The device integrates an amplifier MOS-FET with source and substrate interconnected, alongside an internal bias circuit designed to ensure superior cross-modulation performance during automatic gain control (AGC). It operates as a low noise gain controlled amplifier up to 1 GHz.
Verify the specific suffix 215 against official NXP documentation to confirm packaging details and compliance status. Ensure the component matches the SOT143R plastic microminiature package specification. Cross-reference the part number with current datasheets to confirm availability and any potential obsolescence notices from the manufacturer.
Select this component for designs requiring low noise amplification in VHF and UHF bands. It is suitable for systems operating between 3 and 7 volts. The internal bias circuit makes it ideal for applications demanding stable cross-modulation performance under automatic gain control conditions. Verify compatibility with existing PCB footprints for the SOT143R package.
This component belongs to the family of N-channel dual gate MOS-FETs produced by NXP Semiconductors. These devices are engineered for RF applications where signal integrity and noise performance are critical. The dual gate structure allows for effective gain control while maintaining high linearity in sensitive receiver front-ends.
Public confirmed substitute part numbers are not available in the provided data. Consult NXP technical support or authorized distributors for pin-compatible alternatives if sourcing issues arise.