BF909AWR,115

Overview

The BF909AWR,115 is an N-channel enhancement mode MOSFET quad configured as a single transistor in a SOT-343R surface-mount package. It features a maximum drain-source voltage of 7 V and a continuous drain current of 40 mA. The device operates with a gate threshold voltage ranging from 0.3 V to 1.2 V and supports a maximum power dissipation of 280 mW. Designed for high reliability, it withstands operating temperatures up to +150 °C within a compact footprint measuring 2.2 mm in length, 1.35 mm in width, and 0.9 mm in height.

Feature Summary

• N-channel enhancement mode architecture optimized for low-voltage switching applications
• Quad configuration utilized as a single transistor for space-constrained designs
• High thermal stability supporting operation up to +150 °C junction temperature

Applications

• Low-voltage signal switching circuits
• Battery-powered portable electronic devices
• Consumer electronics requiring compact surface-mount components

Procurement Notes

Verify the complete part number including the suffix

Selection Notes

Select this component when a small-footprint N-channel MOSFET is required for low-voltage logic interfacing. Ensure the design accommodates the 7 V drain-source limit and 40 mA current rating. The SOT-343R package suits high-density PCB layouts where minimal board area is critical for the application constraints.

Part Context

This component belongs to NXP's portfolio of discrete semiconductor devices designed for general-purpose switching. It complements larger power MOSFETs by offering a solution for low-current, low-voltage tasks where physical size and thermal performance are prioritized over high-power handling capabilities within consumer and industrial hardware systems.

Replacement Considerations

Consult official cross-reference data for verified substitutes. Ensure any replacement matches the SOT-343R package dimensions and maintains equivalent electrical ratings for voltage and current handling.