BF909R,215

Overview

The BF909R,215 is an N-channel dual gate MOS-FET in a SOT-143R plastic microminiature package. It features an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit for cross-modulation performance during AGC. Designed for 5 V supply voltage, it offers high forward transfer admittance and low noise gain control up to 1 GHz.

Feature Summary

• Dual gate structure with integrated bias circuitry
• Optimized for low noise amplification
• Superior cross-modulation performance under AGC conditions

Applications

• VHF television tuners
• UHF professional communications equipment
• Low noise RF amplifiers

Procurement Notes

Verify the specific suffix '215' against the manufacturer's official documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with SOT-143R footprint requirements. Cross-reference the part number with current NXP availability status to avoid obsolete components.

Selection Notes

Select this component for designs requiring dual-gate MOSFET functionality in a compact surface-mount package. The internal bias circuit simplifies AGC implementation. Verify that the operating frequency range up to 1 GHz meets system bandwidth requirements.

Part Context

This device belongs to NXP's RF small signal MOSFET family. It is specifically engineered for VHF and UHF bands with 3 to 7 V supply voltages. The dual-gate architecture allows for precise gain control while maintaining signal integrity in sensitive receiver front-ends.

Replacement Considerations

Check NXP datasheets for direct equivalents such as BF909 or BF909A. Confirm pinout compatibility and electrical parameter alignment before substitution.