BF909WR,115

Overview

The BF909WR,115 is an N-channel enhancement mode MOSFET manufactured by NXP Semiconductors. It features a dual-gate configuration housed in a SOT-343R surface-mount package with four pins. The device operates with a maximum drain-source voltage of 7 V and supports a continuous drain current of 40 mA. Key electrical parameters include a gate threshold voltage range of 0.3 V to 1.2 V and a maximum power dissipation of 280 mW. The component is designed for high-frequency applications, exhibiting a maximum feedback capacitance of 0.05 pF, and functions within an operating temperature range up to +150 °C.

Feature Summary

• Dual-gate architecture optimized for UHF band RF small signal amplification
• Low feedback capacitance supporting ultra-high frequency operation
• Enhancement mode N-channel design for efficient switching control

Applications

• UHF band RF amplifier circuits
• Small signal processing in radio frequency systems
• High-frequency transistor stages requiring low capacitance

Procurement Notes

Verify the specific suffix

Selection Notes

Select this component for designs requiring a dual-gate N-channel MOSFET in a compact SOT-343R package. Ensure the application operates within the 7 V drain-source voltage limit and utilizes the dual-gate structure for impedance matching or gain control in UHF frequencies. Confirm thermal management capabilities align with the 280 mW power dissipation rating at expected ambient temperatures.

Part Context

This part belongs to NXP's portfolio of silicon-based RF small signal MOSFETs. It is distinct from single-gate variants by offering two independent gate terminals, allowing for more complex circuit topologies such as cascode configurations or variable gain amplifiers. The SOT-343R package provides a small footprint suitable for dense PCB layouts in consumer and industrial electronics.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.