BF992,215

Overview

The BF992,215 is a silicon N-channel depletion-type dual-gate MOS-FET in an SOT143B package. It features a drain-source voltage of 20 V and a continuous drain current of 40 mA. The device includes integrated back-to-back gate-source protection diodes. Key electrical parameters include a forward transfer admittance of 25 mS at 1 kHz and a noise figure of 1.2 dB at 200 MHz. Total power dissipation is rated at 200 mW with a maximum operating junction temperature of 150 °C.

Feature Summary

• Dual-gate architecture for RF signal processing
• Integrated back-to-back gate-source protection diodes
• Depletion-mode operation
• Plastic micro-miniature surface-mount packaging

Applications

• VHF television tuners
• FM tuners with 12 V supply voltage
• Professional communications equipment

Procurement Notes

Verify the specific ordering suffix to confirm the exact tape-and-reel quantity and orientation, as these details are defined in the packing information document. Ensure the component matches the required RoHS compliance status indicated in the datasheet revision history. Confirm that the antistatic handling precautions are strictly followed during storage and assembly to prevent electrostatic discharge damage to the sensitive gate terminals.

Selection Notes

Select this component for applications requiring a dual-gate configuration in a compact SOT143B footprint. The device is suitable for low-noise amplification in VHF bands where a 1.2 dB noise figure is advantageous. Consider the 20 V drain-source voltage limit when designing circuits with higher supply rails or transient spikes. The depletion-mode characteristic requires appropriate biasing strategies compared to enhancement-mode alternatives.

Part Context

This part belongs to the family of silicon N-channel dual-gate MOS-FETs manufactured by NXP Semiconductors. It is designed specifically for radio frequency applications, offering high isolation between gates due to its physical structure. The SOT143B package provides a small form factor suitable for space-constrained consumer electronics and professional communication devices operating in the VHF spectrum.

Replacement Considerations

Check for direct pin-compatible substitutes within the same manufacturer's portfolio that maintain identical gate configurations and voltage ratings. Verify that any alternative device offers comparable noise figures and forward transfer admittance to ensure circuit performance stability without redesigning the bias network.