BF994S,215

Overview

The BF994S,215 is an N-channel depletion-type MOSFET in a SOT-143 surface-mount package. It features a maximum drain-source voltage of 20 V and a continuous drain current of 30 mA. The device has a single transistor configuration with a maximum power dissipation of 200 mW. Gate threshold voltage is up to 2.5 V, while the gate-source voltage range is -6 V to +6 V. Operating temperature spans from -65 °C to +150 °C. Typical power gain is 25 dB.

Feature Summary

• Back-to-back gate-source protection diodes
• Interconnected source and substrate

Applications

• Professional communications equipment
• VHF television tuners

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm the specific suffix matches the required tape reel orientation and packaging standard. Check for discontinuation status as historical reference data may apply. Ensure storage conditions comply with moisture sensitivity levels for surface-mount devices.

Selection Notes

Select this component for low-voltage RF applications requiring depletion-mode operation. The SOT-143 package suits space-constrained designs. Verify thermal management capabilities against the 200 mW dissipation limit. Ensure circuit design accommodates the negative gate-source voltage requirements inherent to depletion-type transistors.

Part Context

This part belongs to the BF99x series of silicon N-channel dual-gate MOS-FETs manufactured by NXP. These components are designed for microminiature plastic packages. The series supports high-frequency analog signal processing tasks within compact electronic systems.

Replacement Considerations

Check for compatible depletion-mode N-channel MOSFETs in SOT-143 packages. Verify matching electrical parameters such as Vds, Id, and package dimensions before substitution.