BF998E6327HTSA1

Overview

The BF998E6327HTSA1 is an N-channel RF MOSFET transistor manufactured by Infineon Technologies. It operates with a drain-source breakdown voltage of 12 V and supports a continuous drain current of 30 mA at 25°C. The device features a gate-source breakdown voltage range of +8 V to +12 V and dissipates up to 200 mW of power. Designed for ultra-high frequency applications, it functions effectively up to 1 GHz with a typical gain of 28 dB. The component is housed in a SOT-143 surface-mount package, measuring approximately 10 mg in weight, and is rated for operation between -55°C and +150°C.

Feature Summary

• N-channel silicon construction optimized for UHF band signal amplification
• High-frequency performance capability reaching 1 GHz operational bandwidth
• Robust thermal stability supporting extended temperature ranges from -55°C to +150°C

Applications

• UHF band small signal amplification circuits
• RF front-end modules requiring low-voltage operation
• Ultra-high frequency communication systems

Procurement Notes

Verify the exact ordering suffix HTSA1 against official Infineon documentation to confirm reel packaging specifications. Ensure compatibility with SOT-143 footprint requirements during PCB layout. Confirm RoHS compliance status through current datasheets as manufacturing processes may evolve. Cross-reference part numbers with authorized distributors to avoid obsolete stock issues given the component's discontinuation status.

Selection Notes

Select this component for designs requiring N-channel enhancement mode operation at low voltages. The 12 V breakdown rating suits battery-powered or low-voltage RF systems. Consider the 200 mW power dissipation limit when designing thermal management solutions. The SOT-143 package offers a compact solution for space-constrained high-frequency applications compared to larger leaded packages.

Part Context

This part belongs to the BF998 series of RF MOSFETs from Infineon. It serves as a specialized small-signal transistor for ultra-high frequency bands. The E6327 suffix typically denotes specific tape-and-reel packaging configurations used in automated assembly processes. This component represents a legacy silicon technology solution for UHF applications before wider adoption of GaN or advanced CMOS RF technologies.

Replacement Considerations

Official substitutes are not explicitly listed in available public data. Evaluate other N-channel RF MOSFETs with similar 12 V Vds and SOT-143 packaging. Verify that replacement devices match the 1 GHz frequency response and 28 dB gain characteristics. Check for equivalent gate-source voltage thresholds to ensure circuit biasing compatibility without modification.