BF998R,215

Overview

The BF998R,215 is a silicon N-channel dual-gate MOSFET designed for UHF band RF small signal applications. It features an SOT-143 surface-mount package with four pins. Key electrical parameters include a maximum drain-source voltage of 12 V and a continuous drain current of 30 mA. The device supports a power dissipation of 200 mW and operates within a temperature range of -65 °C to +150 °C. It is compliant with RoHS standards and contains no SVHC.

Feature Summary

• Dual-gate architecture providing high isolation and low feedback capacitance for stable RF performance
• N-channel silicon construction optimized for UHF frequency operation
• Integrated ESD protection mechanisms for enhanced reliability

Applications

• UHF band RF amplification stages
• Low-noise amplifier (LNA) circuits
• RF mixer applications in communication systems

Procurement Notes

Verify the specific ordering code suffix against the manufacturer's latest datasheet to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets current environmental compliance requirements such as RoHS and REACH standards before integration into final designs.

Selection Notes

Select this component for designs requiring a compact dual-gate MOSFET in an SOT-143 package. Ensure the application operates within the specified 12 V drain-source voltage limit and 200 mW power dissipation constraints. Verify thermal management capabilities for the intended operating environment.

Part Context

This component belongs to the family of silicon N-channel dual-gate MOSFETs historically produced by Philips Semiconductors and later NXP. These devices are characterized by their short-channel structure and high quality factor, making them suitable for specialized RF applications where signal integrity and gain are critical.

Replacement Considerations

Potential substitutes include the BF998 from Infineon Technologies and the BF998 from Vishay Siliconix. Verify pinout compatibility and electrical parameter equivalence before substitution.