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Product Detailed Parameters
- Description：RF TRANS NPN 15V 5.5GHZ SOT223-4
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：15V
- Frequency - Transition：5.5GHz
- Noise Figure (dB Typ @ f)：2dB ~ 3dB @ 900MHz ~ 1.8GHz
- Gain：14dB ~ 8.5dB
- Power - Max：1W
- DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 70mA, 8V
- Current - Collector (Ic) (Max)：210mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-261-4, TO-261AA
- Supplier Device Package：PG-SOT223-4
- Grade：-
- Qualification：-
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Overview
The BFG 19S E6327 is an NPN silicon RF bipolar junction transistor manufactured by Infineon Technologies. It is housed in a surface-mount SOT-89-4 package and operates within a temperature range of -55°C to +150°C. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 15 V, a collector-base voltage (VCBO) of 20 V, and an emitter-base voltage (VEBO) of 3 V. The device supports a maximum DC collector current of 0.21 A and features a gain-bandwidth product (fT) of 5500 MHz.
Feature Summary
- Designed for low noise and low distortion broadband amplification
- Suitable for antenna and telecommunications systems up to 1.5 GHz
- Operates efficiently at collector currents ranging from 10 mA to 70 mA
Applications
- Low noise broadband amplifiers
- Antenna systems
- Telecommunications equipment
Procurement Notes
Verify component authenticity through official Infineon channels or authorized distributors. Confirm the specific suffix matches the required package and qualification standards. Check for end-of-life status or discontinuation notices prior to procurement to ensure long-term supply stability.
Selection Notes
Select this component for high-frequency applications requiring low noise figures. Ensure the design accommodates the 15 V collector-emitter voltage limit and the thermal constraints of the SOT-89-4 package. Verify that the operating frequency remains within the effective bandwidth defined by the 5500 MHz transition frequency.
Part Context
This part belongs to the BFG19S series of low-noise silicon bipolar RF transistors. It is specifically engineered for performance in radio frequency circuits where signal integrity is critical. The device utilizes standard silicon technology optimized for high-speed switching and amplification in communication infrastructure.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult Infineon technical support for qualified alternatives if this component is discontinued or unavailable.
