ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：RF TRANS NPN 15V 7GHZ SC-73
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：15V
- Frequency - Transition：7GHz
- Noise Figure (dB Typ @ f)：-
- Gain：-
- Power - Max：1W
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 100mA, 10V
- Current - Collector (Ic) (Max)：150mA
- Operating Temperature：175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-261-4, TO-261AA
- Supplier Device Package：SC-73
- Grade：-
- Qualification：-
Download product information
Overview
The BFG135,115 is an NPN silicon planar epitaxial transistor manufactured by NXP USA Inc., housed in a plastic SOT223 (SC-73) surface-mount package. Designed for wideband amplifier applications, it features small emitter structures with integrated emitter-ballasting resistors to ensure high output voltage capabilities at low distortion levels. The device provides a transition frequency of 7 GHz and a maximum unilateral power gain of 16 dB at 500 MHz. It supports a DC collector current of up to 150 mA and total power dissipation of 1 W, with a junction temperature rating of 175 °C.
Feature Summary
- Integrated emitter-ballasting resistors within small emitter structures to maintain high output voltage capabilities while minimizing distortion.
- Distributed active areas across the device surface to provide an excellent thermal profile for stable operation.
- NPN silicon planar epitaxial construction optimized specifically for wideband amplifier applications.
Applications
- Wideband amplifier circuits
- High-frequency signal processing systems
Procurement Notes
Verify component authenticity through authorized channels as this part may be discontinued. Confirm that the SOT223 package orientation matches design requirements. Ensure thermal management strategies align with the specified junction temperature limits. Review the latest product status documentation before initiating designs.
Selection Notes
Select this component when designing wideband amplifiers requiring high linearity and low distortion. Consider the 7 GHz transition frequency for RF applications. Evaluate the 1 W power dissipation capability against thermal constraints. Verify compatibility with the SOT223 footprint during PCB layout.
Part Context
The BFG135 belongs to the BFG13 series of NPN wideband transistors from NXP Semiconductors. It shares functional similarities with other devices in the family but is distinguished by its specific 7 GHz transition frequency and SOT223 packaging configuration designed for efficient heat dissipation in surface-mount applications.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official NXP resources for potential alternatives if this component is no longer manufactured.
FAQ
What is the purpose of the integrated emitter-ballasting resistors?
They ensure high output voltage capabilities at a low distortion level.
How does the device manage thermal performance?
The distribution of active areas across the surface provides an excellent temperature profile.
What is the maximum transition frequency?
The transition frequency is 7 GHz under standard test conditions.
