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Product Detailed Parameters
- Description：RF TRANS NPN 4.5V 18GHZ CMPAK-4
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：4.5V
- Frequency - Transition：18GHz
- Noise Figure (dB Typ @ f)：-
- Gain：-
- Power - Max：600mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 200mA, 2V
- Current - Collector (Ic) (Max)：500mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-82A, SOT-343
- Supplier Device Package：CMPAK-4
- Grade：-
- Qualification：-
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Overview
The BFG21W,115 is an NPN silicon RF bipolar transistor manufactured by NXP Semiconductors. Designed for ultra-high frequency applications, it operates up to 18 GHz with a collector-emitter maximum voltage of 4.5 V and an emitter-base voltage of 1 V. The device supports a continuous collector current of 500 mA and dissipates up to 600 mW of power. It is housed in a compact SOT-343 surface-mount package, suitable for automated assembly via reel, cut tape, or MouseReel formats. Operating temperatures range from -65 °C to +150 °C.
Feature Summary
- Optimized for high-frequency signal processing within the UHF band
- Integrated single configuration for compact circuit layouts
- Silicon construction ensures thermal stability across wide temperature ranges
Applications
- UHF power amplification stages
- RF mixer circuits
- VHF/UHF oscillator designs
Procurement Notes
Verify component authenticity through official NXP channels or authorized distributors. Confirm RoHS compliance status and check for end-of-life notifications prior to procurement. Ensure packaging specifications match production requirements, as availability may vary by region and distribution channel.
Selection Notes
Select this component for designs requiring high-frequency performance up to 18 GHz. Evaluate thermal management needs given the 600 mW power dissipation limit. Ensure the SOT-343 package footprint aligns with PCB layout constraints and that operating voltages remain within the specified 4.5 V collector-emitter limit.
Part Context
This part belongs to NXP's portfolio of RF bipolar transistors, historically associated with Philips Semiconductors. It serves as a discrete solution for high-frequency analog circuits, distinct from integrated RF ICs. The designation includes specific ordering suffixes indicating packaging variations.
Replacement Considerations
Cross-reference with other NXP UHF transistors such as the BFG series variants. Verify pinout compatibility and electrical parameters before substituting. No direct public substitute part numbers are confirmed.
