BFG25A/X,215

Overview

The BFG25A/X is an NPN silicon wideband transistor housed in a four-lead dual emitter SOT143B plastic package. It supports a maximum collector-base voltage of 8 V and a collector-emitter voltage of 5 V, with a DC collector current limit of 6.5 mA. The device features a transition frequency up to 5 GHz and a total power dissipation of 32 mW at a soldering point temperature of 165 °C. Key electrical characteristics include a typical DC current gain of 80 at 0.5 mA and a noise figure as low as 1.8 dB at 1 GHz.

Feature Summary

• Low current consumption ranging from 100 μA to 1 mA
• Low noise figure for signal integrity
• Gold metallization ensures excellent reliability

Applications

• RF low power amplifiers
• Pocket telephones
• Paging systems

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to confirm availability status and compliance details. Confirm that the SOT143B package dimensions match the design constraints. Ensure the component meets the required environmental standards for the intended deployment environment before finalizing procurement orders.

Selection Notes

Select this component for designs requiring wideband operation up to 5 GHz with minimal power draw. Evaluate the thermal resistance of 320 K/W to ensure adequate heat dissipation within the 32 mW limit. Consider the dual emitter configuration for impedance matching requirements in RF amplifier stages operating below 2 GHz.

Part Context

This part belongs to the BFG series of NPN wideband transistors manufactured by NXP Semiconductors. It utilizes gold metallization technology to enhance long-term reliability compared to standard aluminum metallization alternatives. The SOT143B package provides a compact footprint suitable for space-constrained portable electronic devices.

Replacement Considerations

Consult the official datasheet for cross-reference information regarding compatible substitutes. Verify pinout compatibility and electrical parameter alignment before substituting any alternative components in existing circuit designs.

FAQ

What is the maximum unilateral power gain at 1 GHz?

The maximum unilateral power gain (GUM) is typically 18 dB when the collector current is 0.5 mA, VCE is 1 V, and the ambient temperature is 25 °C.

How does the feedback capacitance vary with voltage?

The feedback capacitance (Cre) decreases as the collector-base voltage increases, dropping from approximately 0.3 pF at low voltages to around 0.21 pF at 1 V under zero bias conditions.

What is the junction temperature limit?

The maximum junction temperature (Tj) is rated at 175 °C.