BFG31,115

Overview

The BFG31,115 is a discontinued NPN planar epitaxial RF bipolar junction transistor manufactured by NXP USA Inc. It is housed in a SOT-223 surface-mount package and designed for high-frequency applications up to 5 GHz. Key electrical specifications include a maximum collector-emitter voltage of 4.5 V, a maximum DC collector current of 3 mA, and a power dissipation rating of 16 mW. The device features a transition frequency of 17 GHz and operates within a temperature range of -65°C to +150°C.

Feature Summary

• NPN planar epitaxial construction optimized for RF performance
• Wideband operation capability extending to 5 GHz
• Designed specifically for MATV (Master Antenna Television) applications

Applications

• MATV system amplification
• RF signal processing circuits
• Broadband amplifier stages

Procurement Notes

This component is officially listed as No Longer Manufactured by NXP. Verification should confirm the discontinuation status via official NXP documentation or authorized distributors before design finalization. Historical datasheets remain available for reference only.

Selection Notes

Designers must evaluate alternative components due to the discontinued status of the BFG31,115. Selection criteria should prioritize matching the original 5 GHz bandwidth, SOT-223 footprint, and low-voltage operation requirements while ensuring availability from active manufacturers.

Part Context

The BFG31 belongs to the BFG series of wideband transistors. It serves as the PNP complement to the BFG97 NPN transistor. Both devices share similar architectural characteristics intended for broadband RF applications, with the BFG31 providing the complementary polarity configuration.

Replacement Considerations

Publicly confirmed substitute part numbers are not provided in the source material. Designers should consult NXP's official replacement guides or equivalent RF transistor families that match the SOT-223 package and 5 GHz operational limits.