BFG325/XR,215

Overview

The BFG325/XR is an NPN silicon planar epitaxial transistor designed for Radio Frequency (RF) front-end applications in the GHz range. It features a 4-pin dual-emitter SOT143R plastic package with reverse pinning. Key electrical parameters include a collector-base voltage of 15 V, a collector-emitter voltage of 6 V, and a maximum DC collector current of 35 mA. The device exhibits a transition frequency of 14 GHz and a total power dissipation of 210 mW at a solder point temperature of 90 °C or less. Additional characteristics include a typical DC current gain of 100, a noise figure of 1.1 dB at 2 GHz, and a maximum power gain of 18.3 dB at 1.8 GHz.

Feature Summary

• High power gain suitable for RF amplification
• Low noise figure for signal integrity
• High transition frequency for wideband operation
• Gold metallization ensures excellent reliability

Applications

• Analog and digital cellular telephones
• Cordless telephones (CT, PCN, DECT)
• Radar detectors
• Satellite Antenna TeleVision (SATV) tuners
• Repeater amplifiers in fiber-optic systems

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm the specific ordering suffix matches the required packaging format. Check the latest product status on official NXP Semiconductors resources to ensure availability and compliance with current specifications before finalizing procurement plans.

Selection Notes

Select this component for designs requiring high-frequency performance up to 14 GHz with low noise characteristics. Ensure the circuit design accommodates the 6 V collector-emitter voltage limit and the 35 mA maximum DC collector current. Verify thermal management strategies to maintain the solder point temperature within the specified limits for optimal power dissipation.

Part Context

This component belongs to the BFG series of NPN silicon planar epitaxial transistors manufactured by NXP Semiconductors. It is specifically engineered for wideband RF applications, offering a balance of high gain and low noise in a compact surface-mount package. The SOT143R package provides a standardized footprint for integration into modern electronic devices.

Replacement Considerations

Consult official NXP documentation for verified substitute part numbers. Cross-referencing should be performed carefully to ensure compatibility with voltage, current, and frequency requirements.

FAQ

What is the transition frequency of the BFG325/XR?

The transition frequency is 14 GHz under conditions of IC = 15 mA, VCE = 3 V, f = 1 GHz, and Tamb = 25 °C.

What is the maximum power dissipation rating?

The total power dissipation is 210 mW when the temperature at the soldering point of the collector pin is 90 °C or less.

What is the package type for this transistor?

It is housed in a 4-pin dual-emitter SOT143R plastic package with reverse pinning.