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Product Detailed Parameters
- Description：RF TRANS NPN 18V 4GHZ SC-73
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：18V
- Frequency - Transition：4GHz
- Noise Figure (dB Typ @ f)：-
- Gain：-
- Power - Max：1W
- DC Current Gain (hFE) (Min) @ Ic, Vce：25 @ 100mA, 10V
- Current - Collector (Ic) (Max)：150mA
- Operating Temperature：175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-261-4, TO-261AA
- Supplier Device Package：SC-73
- Grade：-
- Qualification：-
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Overview
The BFG35,115 is an NPN planar epitaxial transistor manufactured by NXP Semiconductors. It is housed in a plastic SOT-223 (SC-73) surface-mount package with four pins and measures 1.7 x 6.7 x 3.7 mm. The device supports a maximum DC collector current of 150 mA and features high output voltage capabilities, including a maximum collector-emitter voltage of 18 V, a collector-base voltage of 25 V, and an emitter-base voltage of 2 V. Designed for wideband amplifier applications, it operates up to a maximum frequency of 4000 MHz. The component has a maximum power dissipation of 1 W and functions within a temperature range from -65 °C to +175 °C.
Feature Summary
- High output voltage capability suitable for demanding signal amplification
- Small SOT-223 package designed for efficient surface-mount integration
- Wideband performance optimized for high-frequency amplifier applications
Applications
- Wideband amplifier circuits
- Video amplifier boards
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package orientation and tape reel specifications. Confirm that the component meets RoHS compliance requirements for your target market. Ensure the design accounts for the device's status as not recommended for new designs, requiring validation of long-term availability or approved replacement parts before finalizing procurement plans.
Selection Notes
Select this component only if its 18 V collector-emitter rating and 150 mA current capacity align with the circuit requirements. Verify compatibility with the SOT-223 footprint during layout. Consider thermal management due to the 1 W power dissipation limit. Evaluate alternative devices like the BFU580G or BFU590G if the BFG35 is unsuitable for new designs.
Part Context
The BFG35 belongs to NXP's portfolio of NPN wideband transistors intended for amplifier applications. It is part of a family that includes variants such as the BFG35A, BFG35B, and BFG35C, which share similar electrical characteristics but may differ in specific performance bins. These components are designed for use in systems requiring high-frequency signal processing and wideband operation.
Replacement Considerations
NXP recommends using the BFU580G or BFU590G as replacements for the BFG35 in new designs. Verify pinout compatibility and electrical parameter alignment when substituting these alternatives.
