BFG425W

$0.51

Description：RF TRANS NPN 4.5V 25GHZ SOT-343R
Series：-

SKU:bc44cd677b00 Category: Bipolar RF Transistors Brand: EVVO

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 4.5V 25GHZ SOT-343R
Series：-
Mfr：EVVO
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：4.5V
Frequency - Transition：25GHz
Noise Figure (dB Typ @ f)：0.8dB ~ 1.2dB @ 900MHz ~ 2GHz
Gain：20dB
Power - Max：135mW
DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 25mA, 2V
Current - Collector (Ic) (Max)：30mA
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SC-82A, SOT-343
Supplier Device Package：SOT-343R
Grade：-
Qualification：-

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BFG425W

Overview

The BFG425W is a microwave, low noise SiGe NPN HBT transistor designed for UHF applications up to 25 GHz. It utilizes a subminiature SOT-343R package suitable for high-density surface mount installation. Key electrical parameters include a transition frequency of 25 GHz and a maximum power gain of 20 dB at 2 GHz. The device operates with a collector current of 25 mA and a VCE of 2 V, achieving a typical noise figure of 1.2 dB and an output P1dB of 12 dBm. Absolute maximum ratings specify a total power dissipation of 135 mW and a collector current limit of 150 mA.

Feature Summary

Utilizes Silicon Germanium (SiGe) HBT technique for high power gain and large dynamic range
Optimized for high density surface patch installation via the SOT-343R package
Provides low noise performance suitable for broadband high frequency amplification

Applications

RF front end modules
Analog and digital cellular telephones
Cordless telephones including PHS and DECT systems
Satellite television tuners (SATV)
High frequency oscillators

Procurement Notes

Verify component authenticity by checking the manufacturer marking against the official datasheet specifications. Confirm the package type matches the SOT-343R outline dimensions provided in the documentation. Ensure the operating junction temperature range aligns with system requirements before finalizing procurement decisions.

Selection Notes

Select this component for designs requiring a 25 GHz transition frequency within a compact footprint. The SiGe HBT technology supports operation across a wide temperature range from -55°C to +85°C. Designers should account for the 135 mW total power dissipation limit when determining thermal management strategies for the circuit board layout.

Part Context

This component belongs to the category of microwave transistors utilizing Silicon Germanium heterojunction bipolar transistor technology. It is engineered specifically for ultra-high frequency applications where low noise figures and high gain are critical. The SOT-343R packaging allows for integration into space-constrained mobile and wireless communication devices.