BFG480W,115

Overview

The BFG480W is an NPN wideband transistor designed for low voltage RF applications. It features a 4-pin dual-emitter SOT343R plastic package with the emitter serving as the thermal lead. The device supports a collector-emitter voltage of 4.5 V and a DC collector current up to 250 mA, with total power dissipation rated at 360 mW. Key electrical parameters include a transition frequency of 21 GHz and a maximum gain of 16 dB at 2 GHz. Under pulsed class-AB operation at 2 GHz with a 3.6 V supply, it delivers 20 dBm output power at 1 dB compression, achieving over 40% collector efficiency.

Feature Summary

• High power gain and high efficiency suitable for driver stages
• Low noise figure optimized for sensitive front-end reception
• Emitter pin functions as thermal lead for effective heat dissipation
• Low feedback capacitance enhances stability in broadband circuits

Applications

• RF front end requiring high linearity for CDMA systems
• Common emitter class AB driver stage
• PA driver in AMPS, TDMA, and GSM systems

Procurement Notes

Verify the component status against the latest NXP documentation before design finalization. Confirm that the application environment remains within the specified absolute maximum ratings, particularly regarding junction temperature and soldering point limits. Ensure proper anti-static handling procedures are followed during transport and assembly to prevent electrostatic discharge damage to the device.

Selection Notes

Select this transistor for low voltage designs requiring high transition frequency and linear amplification. The SOT343R package requires careful thermal management due to the limited power dissipation rating. Designers must account for the specific bias conditions required to achieve optimal noise figures or power gains, as performance varies significantly with collector current and frequency.

Part Context

The BFG480W belongs to the fifth generation of transistors from Philips Semiconductors, now NXP. It is engineered specifically for PA driver roles in mobile communication standards such as CDMA and GSM. The device utilizes double polysilicon technology with a buried layer to support efficient operation at frequencies up to 2 GHz under low voltage constraints.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.