BFG540W,115

Overview

The BFG540W,115 is an NPN silicon planar epitaxial transistor designed for wideband applications in the GHz range. It is housed in a 4-pin dual-emitter SOT343N plastic package with gold metallization for reliability. Key electrical parameters include a maximum collector current of 120 mA and total power dissipation of 500 mW at a soldering point temperature of 85 °C or less. The device features a transition frequency of 9 GHz and a DC current gain (hFE) ranging from 100 to 250 at 40 mA and 8 V. At 900 MHz, it provides an insertion power gain of approximately 15 dB and a noise figure as low as 1.3 dB under optimized conditions.

Feature Summary

• High power gain suitable for broadband amplification
• Low noise figure for sensitive signal reception
• High transition frequency enabling GHz-range operation
• Gold metallization ensuring excellent long-term reliability

Applications

• RF front end wideband applications in the GHz range
• Analog and digital cellular telephones
• Cordless telephones (CT2, CT3, PCN, DECT)
• Radar detectors and pagers
• Satellite television tuners (SATV)

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to confirm pin configuration and packaging details. The '115' suffix indicates tape and reel packaging within the SOT343N outline. Confirm that the component meets all absolute maximum ratings for your specific operating environment before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring high-frequency performance up to 9 GHz with low noise characteristics. Ensure the design accommodates the 500 mW power dissipation limit by maintaining the soldering point temperature below 85 °C. Verify that the required DC current gain falls within the specified 100 to 250 range for your biasing conditions.

Part Context

This part belongs to the BFG540 series of NPN wideband transistors manufactured by NXP Semiconductors. It shares functional similarities with the BFG540W/X and BFG540W/XR variants, differing primarily in pinout configurations and physical packaging styles such as SOT343N versus SOT343R.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult official NXP documentation for recommended replacements if this specific variant becomes unavailable.

FAQ

What is the transition frequency of the BFG540W?

The transition frequency (fT) is 9 GHz when measured at a collector current of 40 mA, a collector-emitter voltage of 8 V, and a frequency of 1 GHz.

What is the maximum power dissipation rating?

The total power dissipation (Ptot) is rated at 500 mW, provided the temperature at the soldering point of the collector pin does not exceed 85 °C.

What package type does the BFG540W use?

The BFG540W is mounted in a 4-pin dual-emitter SOT343N plastic surface-mounted package.