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Product Detailed Parameters
- Description：RF TRANS NPN 15V 9GHZ SC-73
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：15V
- Frequency - Transition：9GHz
- Noise Figure (dB Typ @ f)：1.3dB ~ 2.4dB @ 900MHz
- Gain：-
- Power - Max：650mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 40mA, 8V
- Current - Collector (Ic) (Max)：120mA
- Operating Temperature：175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-261-4, TO-261AA
- Supplier Device Package：SC-73
- Grade：-
- Qualification：-
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Overview
The BFG541,115 is an NPN silicon planar epitaxial transistor designed for wideband applications in the GHz range. It features a plastic SOT223 envelope with gold metallization for reliability. Key electrical parameters include a collector-emitter voltage (VCES) of 15 V, a DC collector current (IC) of 120 mA, and a total power dissipation (Ptot) of 650 mW up to a soldering point temperature of 140 °C. The device exhibits a transition frequency (fT) of 9 GHz at IC = 40 mA and VCE = 8 V. At 900 MHz, it provides a maximum unilateral power gain (GUM) of 15 dB and a noise figure as low as 1.3 dB.
Feature Summary
- High power gain suitable for RF amplification
- Low noise figure for sensitive signal reception
- Gold metallization ensures excellent long-term reliability
Applications
- Analog and digital cellular telephones
- Cordless telephones (CT1, CT2, DECT)
- Radar detectors
- Satellite TV tuners (SATV)
- MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for specific environmental declarations such as REACH SVHC. Ensure the package matches the SOT223 outline specifications. Review the most recent product specification document before initiating design integration.
Selection Notes
Select this component for wideband amplifier circuits requiring high output voltage capabilities and low noise performance in the GHz range. Evaluate thermal resistance characteristics, specifically the junction-to-soldering point resistance, to ensure adequate heat dissipation within the SOT223 package constraints for the intended operating conditions.
Part Context
The BFG541 belongs to the NXP Semiconductors discrete semiconductor portfolio, specifically categorized under RF bipolar transistors. It is part of a series of NPN wideband transistors engineered for high-frequency operations. The '115' suffix indicates the standard tape and reel packaging configuration used for surface-mount assembly processes.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult official replacement guides or contact the manufacturer directly for qualified alternatives.
