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Product Detailed Parameters
- Description：RF TRANS NPN 10V 8GHZ SOT-143B
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：10V
- Frequency - Transition：8GHz
- Noise Figure (dB Typ @ f)：1.3dB ~ 3dB @ 1GHz ~ 2GHz
- Gain：-
- Power - Max：380mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 15mA, 5V
- Current - Collector (Ic) (Max)：50mA
- Operating Temperature：175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-253-4, TO-253AA
- Supplier Device Package：SOT-143B
- Grade：-
- Qualification：-
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Overview
The BFG67,215 is an NPN silicon RF small signal transistor manufactured by NXP Semiconductors. It is designed for L-band applications and housed in a plastic SOT-363 surface-mount package. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 10 V, a maximum collector-base voltage (VCBO) of 18 V, and a maximum emitter-base voltage (VEBO) of 2 V. The device supports a continuous collector current of 50 mA with a power dissipation rating of 200 mW. It features a minimum DC current gain (hFE) of 40 and operates up to a maximum frequency of 2 GHz.
Feature Summary
- Optimized for L-band radio frequency applications
- Utilizes silicon technology for reliable performance
- Designed for surface-mount installation
Applications
- L-band RF amplification circuits
- General-purpose RF signal processing
- Ultra-high frequency band applications
Procurement Notes
Verify the specific ordering code suffix against official NXP documentation to confirm packaging details. Confirm RoHS compliance status through the manufacturer's datasheet or certification documents before procurement. Ensure the component meets all environmental standards required for the intended deployment environment.
Selection Notes
Select this component when designing circuits requiring an NPN transistor for L-band frequencies. Verify that the required operating voltage remains within the 10 V collector-emitter limit. Ensure the thermal management design accommodates the 200 mW power dissipation capability in the specified SOT-363 package.
Part Context
This part belongs to the BFG series of RF bipolar transistors from NXP Semiconductors. The series includes various variants optimized for different frequency bands and power levels. The BFG67 specifically targets L-band requirements, distinguishing it from other family members designed for higher frequency ranges or different power constraints.
Replacement Considerations
Consult official substitution guides for verified alternatives. Cross-reference technical specifications such as frequency range, voltage ratings, and package dimensions to ensure compatibility.
