BFP 196R E6327

BFP 196R E6327

$0.14
  • Description:RF TRANS NPN 12V 7.5GHZ SOT-143
  • Series:-

SKU:3a16bdb8ed45 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 12V 7.5GHZ SOT-143
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):12V
  • Frequency - Transition:7.5GHz
  • Noise Figure (dB Typ @ f):1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
  • Gain:10.5dB ~ 16.5dB
  • Power - Max:700mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 50mA, 8V
  • Current - Collector (Ic) (Max):150mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-253-4, TO-253AA
  • Supplier Device Package:PG-SOT-143-3D
  • Grade:-
  • Qualification:-

Download product information

BFP 196R E6327

Overview

The BFP196 is a low noise silicon bipolar RF transistor designed for broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz. It operates at collector currents from 20 mA to 80 mA and features an fT of 7.5 GHz with a minimum noise figure of 1.3 dB at 900 MHz. The device supports DECT and PCN power amplifier applications. Key electrical ratings include a maximum collector-emitter voltage (VCEO) of 12 V, a collector current (IC) limit of 150 mA, and total power dissipation of 700 mW. It utilizes the SOT143 package.

Feature Summary

  • Optimized for low noise and low distortion performance in broadband amplifier designs
  • Suitable for power amplifier implementations in DECT and PCN system architectures
  • High transition frequency enabling operation across wide bandwidths

Applications

  • Low noise broadband amplifiers in antenna systems
  • Telecommunications systems operating up to 1.5 GHz
  • Power amplifiers for DECT systems
  • Power amplifiers for PCN systems

Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm RoHS compliance status and check for AEC-Q101 qualification reports if automotive integration is required. Ensure proper ESD handling precautions are observed during storage and assembly due to device sensitivity.

Selection Notes

Select this component when designing circuits requiring high linearity and minimal noise insertion loss below 1.5 GHz. Evaluate thermal management requirements against the 700 mW dissipation limit and junction temperature constraints. Consider biasing conditions between 20 mA and 80 mA to optimize noise figure and gain characteristics for specific frequency bands.

Part Context

This part belongs to the BFP196 series of silicon bipolar RF transistors manufactured by Infineon Technologies. It is housed in the SOT143 surface-mount package. The product is Pb-free and RoHS compliant. Documentation indicates availability of qualification reports according to AEC-Q101 standards.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

BFP 196R E6327BFP 196R E6327
$0.14
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