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Product Detailed Parameters
- Description：RF TRANS NPN 12V 7.5GHZ SOT-143
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：12V
- Frequency - Transition：7.5GHz
- Noise Figure (dB Typ @ f)：1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
- Gain：10.5dB ~ 16.5dB
- Power - Max：700mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 50mA, 8V
- Current - Collector (Ic) (Max)：150mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-253-4, TO-253AA
- Supplier Device Package：PG-SOT-143-3D
- Grade：-
- Qualification：-
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Overview
The BFP196R E6501 is a low noise silicon bipolar RF transistor manufactured by Infineon Technologies. It features an SOT143 package with four pins configured as collector, emitter, base, and emitter. The device supports a maximum collector-emitter voltage of 12 V and a continuous collector current of 150 mA. Key electrical parameters include a transition frequency (fT) of 7.5 GHz at 500 MHz and a minimum noise figure of 1.3 dB at 900 MHz. Total power dissipation is rated at 700 mW with a junction temperature limit of 150 °C.
Feature Summary
- Designed for low noise and low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz
- Suitable for power amplifier applications in DECT and PCN systems
- Pb-free package compliant with RoHS standards
Applications
- Low noise, low distortion broadband amplifiers in antenna systems
- Telecommunications systems operating up to 1.5 GHz
- Power amplifiers for DECT and PCN systems
Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and tape-and-reel specifications. Confirm that the component meets AEC-Q101 qualification requirements if automotive integration is intended. Ensure proper electrostatic discharge handling precautions are observed during storage and assembly processes.
Selection Notes
Select this component for designs requiring high linearity and low noise figures in the sub-1.5 GHz range. Evaluate thermal management strategies based on the 700 mW total power dissipation rating and the specified thermal resistance values. Consider the SOT143 footprint constraints when designing the PCB layout for optimal signal integrity.
Part Context
This part belongs to the BFP196 series of low noise silicon bipolar RF transistors from Infineon Technologies. The series is engineered for high-frequency performance in communication infrastructure. The RIs marking indicates the specific pin configuration variant within the SOT143 package family.
Replacement Considerations
Consult official Infineon cross-reference tools or datasheets for verified equivalent components. Do not substitute without confirming matching electrical characteristics, pin configurations, and thermal ratings.
FAQ
What is the minimum noise figure specification?
The minimum noise figure is 1.3 dB at 900 MHz and 2.3 dB at 1.8 GHz.
What is the maximum collector-emitter voltage?
The maximum collector-emitter voltage (VCEO) is 12 V.
Is the component qualified for automotive applications?
A qualification report according to AEC-Q101 is available for this component.
