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Product Detailed Parameters
- Description：RF TRANS NPN 5V 25GHZ 4-TSFP
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：5V
- Frequency - Transition：25GHz
- Noise Figure (dB Typ @ f)：1.1dB @ 1.8GHz
- Gain：19.5dB
- Power - Max：160mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 5mA, 4V
- Current - Collector (Ic) (Max)：35mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：4-SMD, Flat Leads
- Supplier Device Package：4-TSFP
- Grade：-
- Qualification：-
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Overview
The BFP 420F E6327 is an NPN silicon RF transistor from the SIEGET 25 GHz fT line, designed for high gain and low noise applications. It features a transition frequency of 25 GHz and operates with a collector-emitter voltage of 4.5 V. The device provides a typical DC current gain (hFE) of 95 and supports a maximum collector current of 35 mA. Packaged in a compact SOT343 format, it offers a noise figure of 1.1 dB at 1.8 GHz and a maximum stable gain of 21 dB at the same frequency. Qualified according to AEC-Q101 standards, it ensures reliability for demanding wireless environments.
Feature Summary
- Engineered for high gain and low noise amplifier circuits
- Utilizes gold metallization for enhanced operational reliability
- AEC-Q101 qualified for automotive-grade robustness
Applications
- High gain low noise amplifiers
- Oscillators up to 10 GHz
- Emerging wireless communication systems
Procurement Notes
Verify component authenticity by checking the manufacturer's marking code against official datasheet specifications. Confirm package integrity and pin configuration prior to installation. Ensure proper electrostatic discharge handling protocols are followed during storage and assembly to prevent damage to the sensitive semiconductor junctions.
Selection Notes
Select this component when designing circuits requiring a 25 GHz transition frequency and low noise performance at 1.8 GHz. Consider the 4.5 V collector-emitter voltage rating and 35 mA current limits for biasing requirements. The SOT343 package is suitable for space-constrained designs needing high-frequency stability.
Part Context
This part belongs to Infineon's SIEGET 25 GHz fT line of silicon bipolar transistors. It represents a generation of devices optimized for superior flexibility and performance in radio frequency applications. The series is characterized by its ability to support emerging wireless standards where system specifications may not be fully established.
Replacement Considerations
Consult official replacement lists or distributor cross-reference tools for verified substitutes. Verify that any alternative component matches the required 25 GHz transition frequency, SOT343 package dimensions, and AEC-Q101 qualification status before implementation.
FAQ
What is the transition frequency of the BFP 420F?
The transition frequency (fT) is 25 GHz.
Is the BFP 420F qualified for automotive applications?
Yes, the device is qualified according to the AEC-Q101 standard.
What is the maximum collector-emitter voltage?
The maximum collector-emitter voltage (VCEO) is 4.5 V.
