BFP 520F E6327

BFP 520F E6327

$0.54
  • Description:RF TRANS NPN 3.5V 45GHZ 4-TSFP
  • Series:-

SKU:89c6a982b53c Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 3.5V 45GHZ 4-TSFP
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):3.5V
  • Frequency - Transition:45GHz
  • Noise Figure (dB Typ @ f):0.95dB @ 1.8GHz
  • Gain:22.5dB
  • Power - Max:100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 20mA, 2V
  • Current - Collector (Ic) (Max):40mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:4-SMD, Flat Leads
  • Supplier Device Package:4-TSFP
  • Grade:-
  • Qualification:-

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BFP 520F E6327

Overview

The BFP 520F E6327 is an NPN silicon RF bipolar transistor manufactured by Infineon Technologies. It operates within a frequency range up to 42 GHz and features a collector-emitter maximum voltage of 4 V and an emitter-base voltage of 1.2 V. The device supports a continuous collector current of 30 mA and dissipates up to 160 mW of power. It functions reliably between -65°C and +150°C. Packaged in a TSFP-4 surface-mount format, this component is designed for high-frequency applications requiring compact integration.

Feature Summary

  • High-frequency operation capability up to 42 GHz
  • Silicon-based NPN bipolar junction transistor technology
  • Compact TSFP-4 surface-mount package design

Applications

  • RF signal amplification in communication systems
  • High-frequency switching circuits
  • Wireless infrastructure components

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm exact packaging and tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer's latest datasheet revision. Check for any end-of-life notifications or discontinuation notices prior to finalizing procurement plans to ensure long-term supply stability.

Selection Notes

Select this component when designing circuits requiring NPN silicon transistors with high transition frequencies around 42 GHz. Ensure the application voltage does not exceed the 4 V collector-emitter rating. Verify that the thermal management strategy accommodates the 160 mW power dissipation limit within the specified operating temperature range of -65°C to +150°C.

Part Context

This part belongs to the BFP series of RF bipolar transistors from Infineon Technologies. The series includes various models optimized for different frequency ranges and power levels. The BFP 520F variant specifically targets high-frequency applications, distinguishing itself from lower-frequency counterparts in the same family through its superior transition frequency characteristics.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Infineon documentation for potential cross-reference recommendations.

BFP 520F E6327BFP 520F E6327
$0.54
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