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The BFP 520F E6327 is an NPN silicon RF bipolar transistor manufactured by Infineon Technologies. It operates within a frequency range up to 42 GHz and features a collector-emitter maximum voltage of 4 V and an emitter-base voltage of 1.2 V. The device supports a continuous collector current of 30 mA and dissipates up to 160 mW of power. It functions reliably between -65°C and +150°C. Packaged in a TSFP-4 surface-mount format, this component is designed for high-frequency applications requiring compact integration.
Verify the specific ordering suffix against official documentation to confirm exact packaging and tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer's latest datasheet revision. Check for any end-of-life notifications or discontinuation notices prior to finalizing procurement plans to ensure long-term supply stability.
Select this component when designing circuits requiring NPN silicon transistors with high transition frequencies around 42 GHz. Ensure the application voltage does not exceed the 4 V collector-emitter rating. Verify that the thermal management strategy accommodates the 160 mW power dissipation limit within the specified operating temperature range of -65°C to +150°C.
This part belongs to the BFP series of RF bipolar transistors from Infineon Technologies. The series includes various models optimized for different frequency ranges and power levels. The BFP 520F variant specifically targets high-frequency applications, distinguishing itself from lower-frequency counterparts in the same family through its superior transition frequency characteristics.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Infineon documentation for potential cross-reference recommendations.