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Product Detailed Parameters
- Description：RF TRANS NPN 2.8V 65GHZ 4-TSFP
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：2.8V
- Frequency - Transition：65GHz
- Noise Figure (dB Typ @ f)：0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
- Gain：21dB
- Power - Max：185mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：110 @ 50mA, 1.5V
- Current - Collector (Ic) (Max)：80mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：4-SMD, Flat Leads
- Supplier Device Package：4-TSFP
- Grade：-
- Qualification：-
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Overview
The BFP 620F E7764 is an NPN silicon RF bipolar transistor from the Infineon BFP620 series, designed for high-frequency applications up to 65 GHz. It features a minimum DC collector-base gain (hFE) of 110 and operates within a voltage range defined by a maximum collector-emitter voltage (VCEO) of 2.3 V and an emitter-base voltage (VEBO) of 1.2 V. The device supports a continuous collector current of 80 mA with a power dissipation of 185 mW. It is housed in an SOT-343 surface-mount package and is qualified under AEC-Q100 standards for automotive reliability.
Feature Summary
- Utilizes silicon technology for robust RF performance at frequencies up to 65 GHz.
- Provides high DC current gain with a minimum hFE of 110 for efficient signal amplification.
- Qualified for automotive environments under AEC-Q100 standards ensuring reliability.
- Designed for compact surface-mount integration using the SOT-343 package.
Applications
- Automotive radar systems requiring high-frequency signal processing
- Wireless communication infrastructure components
- High-speed data transmission circuits
Procurement Notes
Verify the specific suffix 'E7764' against official Infineon documentation to confirm exact binning or tape-and-reel specifications. Confirm end-of-life status as related variants show discontinuation notices. Ensure compatibility with AEC-Q100 requirements if used in automotive contexts. Cross-reference part aliases like SP000745302 for accurate ordering.
Selection Notes
Select this component when designing circuits requiring operation near 65 GHz with moderate power handling. The low VCEO of 2.3 V necessitates careful biasing design. Compare noise figures and gain stability against other SiGe options if lower voltage tolerance is required. Ensure thermal management supports the 185 mW dissipation limit in the SOT-343 footprint.
Part Context
This part belongs to the BFP620 family of RF transistors, which are optimized for high-frequency amplification. The series includes various suffixes indicating different packaging or testing grades. The BFP620 line is widely used in telecommunications and sensing applications where small form factors and high speed are critical.
Replacement Considerations
Publicly confirmed substitutes include MRF428 from MACOM Technology Solutions for discontinued variants. Verify pinout and electrical parameters before substitution.
FAQ
What is the maximum operating frequency of the BFP 620F E7764?
The maximum operating frequency is 65 GHz.
Is the BFP 620F E7764 qualified for automotive use?
Yes, it is qualified under the AEC-Q100 standard.
What is the minimum DC current gain (hFE) specified for this transistor?
The minimum DC collector-base gain (hFE) is 110.
