BFP 740FESD E6327

Overview

The BFP 740FESD E6327 is an NPN silicon-germanium (SiGe) RF bipolar transistor manufactured by Infineon Technologies. It operates at a transition frequency of 47 GHz with a maximum collector-emitter voltage of 4.2 V and continuous collector current of 45 mA. The device features a minimum DC current gain (hFE) of 160 and dissipates up to 160 mW of power. Packaged in the TSFP-4 surface-mount format, it supports operating temperatures from -65°C to +150°C. This component holds AEC-Q100 qualification for automotive reliability standards.

Feature Summary

• Utilizes SiGe technology for high-frequency performance
• AEC-Q100 qualified for automotive applications
• TSFP-4 compact surface-mount packaging

Applications

• Automotive radar systems
• High-frequency RF amplification circuits
• Wireless communication front-ends

Procurement Notes

Verify the specific suffix E6327 against official Infineon documentation to confirm exact binning or tape-and-reel specifications. Confirm end-of-life status as this variant may be discontinued. Ensure compatibility with existing PCB footprints for the TSFP-4 package before procurement.

Selection Notes

Select this component when AEC-Q100 automotive qualification is mandatory for RF designs requiring 47 GHz operation. Compare the 4.2 V breakdown voltage and 160 mW thermal limits against circuit requirements. Verify that the TSFP-4 footprint matches the target assembly process.

Part Context

This part belongs to the BFP740 series of RF transistors. It shares the core SiGe architecture with variants like the BFP740FH6327XTSA1 but differs in packaging and specific electrical grading. The E6327 suffix denotes a specific manufacturing lot or bin configuration within the broader product family.

Replacement Considerations

Check for direct replacements such as BFP740FESDH6327XTSA1. Evaluate pin-compatible alternatives only if the original is unavailable. Verify that substitute parts maintain identical AEC-Q100 certification and TSFP-4 package dimensions.