BFP181E7764HTSA1

Overview

The BFP181E7764HTSA1 is a low noise silicon bipolar RF transistor manufactured by Infineon Technologies. It is designed for low noise, high-gain broadband amplifiers operating at collector currents between 0.5 mA and 12 mA. The device features a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. Key electrical parameters include a collector-emitter breakdown voltage (V(BR)CEO) of 12 V, a maximum collector current (IC) of 20 mA, and a total power dissipation (Ptot) of 175 mW. It utilizes an SOT-143 package with four pins.

Feature Summary

• Optimized for low noise and high gain in broadband amplifier applications
• Capable of operation across a wide range of collector currents from 0.5 mA to 12 mA
• Features a high transition frequency of 8 GHz for RF performance
• Constructed using silicon technology with Pb-free RoHS compliant packaging

Applications

• Low noise broadband amplifiers
• RF signal processing circuits requiring high gain
• Communication systems operating in the 900 MHz to 1.8 GHz range

Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm that the ordering suffix matches the specific tape and reel configuration required for your assembly process. Ensure compliance with AEC-Q101 qualification standards if automotive application requirements are necessary. Check for end-of-life status as indicated by manufacturer notices.

Selection Notes

Select this component when designing amplifiers requiring a minimum noise figure of 0.9 dB at 900 MHz. Ensure the circuit design supports the specified collector current range of 0.5 mA to 12 mA for optimal performance. Verify that the SOT-143 package footprint aligns with the PCB layout constraints. Consider the thermal resistance characteristics for heat dissipation management within the 175 mW power limit.

Part Context

This part belongs to the BFP181 series of low noise silicon bipolar RF transistors. It is specifically engineered for applications demanding high gain and low noise figures in the RF spectrum. The E7764HTSA1 suffix denotes the specific packaging and handling configuration provided by Infineon Technologies for surface mount assembly.

Replacement Considerations

Consult Infineon technical documentation for direct replacements. Evaluate alternative RF transistors based on matching fT, NFmin, and package dimensions. Verify compatibility with existing biasing networks and impedance matching circuits before substitution.

FAQ

What is the minimum noise figure of the BFP181 at 900 MHz?

The minimum noise figure (NFmin) is 0.9 dB at 900 MHz when operated at IC = 2 mA and VCE = 8 V.

What is the maximum collector current rating for this transistor?

The maximum continuous collector current (IC) is rated at 20 mA.

Which package type does the BFP181 use?

The BFP181 is housed in an SOT-143 package with four pins.