BFP182RE7764HTSA1

Overview

The BFP182RE7764HTSA1 is a low noise silicon bipolar RF transistor designed for broadband amplifiers operating at collector currents between 1 mA and 20 mA. It features an fT of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. The device is housed in an SOT-143R package with four pins configured as Emitter, Collector, Emitter, and Base. Maximum ratings include a collector-emitter voltage (VCEO) of 12 V, a collector current (IC) of 35 mA, and total power dissipation (Ptot) of 250 mW. DC current gain (hFE) ranges from 70 to 140 at IC = 10 mA.

Feature Summary

• Optimized for low noise and high-gain applications in broadband amplifier circuits
• Provides stable performance across a wide range of collector currents from 1 mA to 20 mA
• Features a compact SOT143R surface-mount package suitable for space-constrained designs

Applications

• Low noise broadband amplifiers
• RF signal processing stages requiring minimal noise contribution
• Communication systems operating in the sub-2 GHz frequency range

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer part number BFP182RE7764HTSA1 with official Infineon documentation. Confirm that the ordering suffix matches the specific reel or tape configuration required for your assembly line. Ensure handling precautions are followed due to electrostatic discharge sensitivity. Check for AEC-Q101 qualification status if automotive reliability standards apply to the target design.

Selection Notes

Select this component when designing amplifiers that require a transition frequency of 8 GHz and a noise figure below 1 dB at 900 MHz. Consider the 12 V collector-emitter voltage rating for biasing requirements. Evaluate the thermal resistance characteristics against the expected power dissipation levels in the final enclosure. Compare the SOT143R footprint against available PCB real estate constraints.

Part Context

This component belongs to the BFP182 series of low noise silicon bipolar transistors manufactured by Infineon Technologies. It shares similar electrical characteristics with other members of the family but is distinguished by its specific packaging and ordering suffixes. The series is engineered for RF applications where low noise and high gain are critical performance metrics.

Replacement Considerations

Direct substitutes within the same series include BFP182E and BFP182H variants, provided they meet the exact pinout and electrical specifications. Verify compatibility before swapping, as differences in packaging or qualification may affect mechanical fit and long-term reliability in the application.