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The BFP182WE6327 is an NPN silicon RF bipolar transistor manufactured by Infineon Technologies. It is designed for low noise and high-gain broadband amplifier applications, operating at collector currents between 1 mA and 20 mA. Key electrical parameters include a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. The device features a maximum collector-emitter voltage (VCEO) of 12 V, a maximum collector-base voltage (VCBO) of 20 V, and a continuous collector current of 35 mA. It operates within a temperature range of -65°C to +150°C and is housed in an SOT-323 surface-mount package.
Verify the specific suffix against official Infineon documentation to confirm pinout and marking codes. Confirm RoHS compliance status through the manufacturer's current declaration. Check for end-of-life notices or obsolescence warnings prior to final design approval. Ensure handling precautions are observed due to electrostatic discharge sensitivity.
Select this component when a silicon NPN transistor with an 8 GHz transition frequency is required for low-noise applications. Compare the 0.9 dB noise figure at 900 MHz against alternative devices if system sensitivity is critical. Verify that the SOT-323 package dimensions fit the target PCB layout constraints.
This part belongs to the BFP182 series of silicon RF transistors from Infineon. It shares functional similarities with other members like the BFP182WH6327XTSA1 but differs in packaging and specific ordering suffixes. The 'W' suffix typically denotes the SOT-323 package variant, distinguishing it from other form factors in the family.
Publicly confirmed direct substitute part numbers are not available in the provided source material. Designers should consult Infineon's official replacement guides or perform rigorous parameter matching for any cross-referencing.