BFP182WE6327HTSA1

Overview

The BFP182WE6327HTSA1 is an NPN silicon RF bipolar transistor manufactured by Infineon Technologies. It is designed for high-frequency applications, featuring a transition frequency of 8 GHz and a maximum collector-emitter voltage (VCEO) of 12 V. The device supports a continuous collector current of 35 mA with a DC current gain (hFE) minimum of 70 at 10 mA and 8 V. It operates within a temperature range of -65 °C to +150 °C and is housed in a surface-mount SOT-23-3 package.

Feature Summary

• Optimized for radio frequency amplification and switching tasks in compact designs.
• Capable of stable operation across a wide industrial temperature spectrum.
• Utilizes a small footprint surface-mount package for efficient PCB integration.

Applications

• RF signal amplification in communication modules
• High-frequency switching circuits
• Wireless infrastructure components

Procurement Notes

Verify the specific suffix HTSA1 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with standard SOT-23-3 footprints during schematic capture. Cross-reference RoHS compliance status directly with the manufacturer's latest environmental declarations prior to final procurement approval.

Selection Notes

Select this component when an NPN RF transistor with an 8 GHz transition frequency is required. Confirm that the 12 V collector-emitter voltage rating meets the circuit's peak operating requirements. Verify that the SOT-23-3 package dimensions align with the available board space constraints.

Part Context

This part belongs to the BFP182 series of RF bipolar transistors from Infineon. The series is characterized by silicon technology optimized for high-frequency performance. The specific model variant includes standardized packaging suffixes indicating reel configuration and manufacturing batch details.

Replacement Considerations

Consult official Infineon substitution guides for verified equivalents. Generic RF transistors may not match the 8 GHz transition frequency or 12 V breakdown voltage limits. Validate pinout compatibility before attempting any physical replacement.