BFP193E6327HTSA1

$0.20

Description：RF TRANS NPN 12V 8GHZ SOT-143-3D
Series：-

SKU:7a6ff0fc81f6 Category: Bipolar RF Transistors Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 12V 8GHZ SOT-143-3D
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：12V
Frequency - Transition：8GHz
Noise Figure (dB Typ @ f)：1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Gain：12dB ~ 18dB
Power - Max：580mW
DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 30mA, 8V
Current - Collector (Ic) (Max)：80mA
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-253-4, TO-253AA
Supplier Device Package：PG-SOT-143-3D
Grade：-
Qualification：-

Download product information

BFP193E6327HTSA1

Overview

The Infineon BFP193E6327HTSA1 is a low noise silicon bipolar RF transistor designed for high-gain and linear broadband amplifiers up to 2 GHz. It features an fT of 8 GHz and a minimum noise figure (NFmin) of 1 dB at 900 MHz. The device operates with a collector-emitter voltage (VCEO) of 12 V, a maximum collector current (IC) of 80 mA, and a total power dissipation (Ptot) of 580 mW. It utilizes the SOT143 package with pin configuration 1=C, 2=E, 3=B, 4=E.

Feature Summary

Optimized for low noise applications in high-gain amplifier circuits
Capable of linear broadband amplification up to 2 GHz frequency range
High transition frequency supporting efficient RF signal processing

Applications

Low noise, high-gain amplifiers operating up to 2 GHz
Linear broadband amplifier designs
RF front-end modules requiring minimal noise contribution

Procurement Notes

Verify component authenticity by checking the marking 'RCs' on the SOT143 package against official datasheet specifications. Confirm RoHS compliance and Pb-free status through manufacturer documentation. Ensure proper ESD handling precautions are observed during storage and assembly to prevent damage to this sensitive semiconductor device.

Selection Notes

Select this component when designing amplifiers requiring a minimum noise figure of 1 dB at 900 MHz and a transition frequency of 8 GHz. Consider the SOT143 package dimensions and thermal resistance characteristics for PCB layout. Ensure biasing conditions align with the specified DC current gain and breakdown voltage limits for optimal performance.

Part Context

This part belongs to the BFP193 series of low noise silicon bipolar RF transistors manufactured by Infineon Technologies. It is specifically engineered for radio frequency applications where low noise and high gain are critical requirements. The device is suitable for integration into communication systems operating within the specified frequency bands.