BFP193WE6327HTSA1

Overview

The BFP193WE6327HTSA1 is a low noise silicon bipolar RF transistor manufactured by Infineon Technologies. It features an SOT-343 package and supports a collector-emitter voltage of 12 V with a maximum power dissipation of 580 mW. The device achieves a transition frequency (fT) of 8 GHz at 500 MHz. At 900 MHz, it provides a minimum noise figure of 1 dB and a maximum available power gain of 20.5 dB. DC current gain ranges from 70 to 140 under specified conditions.

Feature Summary

• Designed for low noise and high-gain amplifier applications up to 2 GHz
• Suitable for linear broadband amplifier implementations
• Pb-free package compliant with RoHS standards

Applications

• Low noise amplifiers operating up to 2 GHz
• High-gain amplifier circuits
• Linear broadband amplifiers

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm the datasheet version matches the production batch requirements. Ensure proper ESD handling precautions are observed during storage and assembly. Check for AEC-Q101 qualification reports if automotive compliance is required for the specific design application.

Selection Notes

Select this component when a low noise figure of 1 dB at 900 MHz is critical. The 8 GHz transition frequency supports operation in broadband applications. Verify that the 12 V collector-emitter voltage rating aligns with the circuit biasing requirements. Ensure the SOT-343 package dimensions fit the PCB layout constraints.

Part Context

This part belongs to the BFP193 series of low noise silicon bipolar RF transistors. The 'E6327' suffix indicates the specific tape and reel packaging format used for surface mount assembly. The device utilizes standard silicon technology optimized for RF performance within a compact footprint.

Replacement Considerations

No direct public substitute part numbers are documented for this specific component. Designers should evaluate other low noise RF transistors based on matching fT, NFmin, and package compatibility.

FAQ

What is the minimum noise figure at 900 MHz?

The minimum noise figure is 1 dB at 900 MHz when IC = 10 mA and VCE = 8 V.

What is the transition frequency of the BFP193W?

The transition frequency (fT) is 8 GHz at a test condition of IC = 50 mA and VCE = 8 V.

Is the BFP193W qualified for automotive applications?

A qualification report according to AEC-Q101 is available for this component.