ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：RF TRANS NPN 12V 7.5GHZ SOT343-4
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：12V
- Frequency - Transition：7.5GHz
- Noise Figure (dB Typ @ f)：1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
- Gain：12.5dB ~ 19dB
- Power - Max：700mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 50mA, 8V
- Current - Collector (Ic) (Max)：150mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-82A, SOT-343
- Supplier Device Package：PG-SOT343-4
- Grade：-
- Qualification：-
Download product information
Overview
The BFP196WE6327 is an NPN silicon wideband RF bipolar transistor manufactured by Infineon Technologies. It operates at a transition frequency of 7.5 GHz with a maximum collector-emitter voltage (VCEO) of 12 V and an emitter-base voltage (VEBO) of 2 V. The device supports a continuous collector current of 100 mA and dissipates up to 700 mW of power. It features a minimum DC current gain (hFE) of 70 and functions within a temperature range of -65 °C to +150 °C. Packaged in SOT-343, it is designed for high-frequency applications.
Feature Summary
- Wideband operation optimized for radio frequency signal processing
- High transition frequency capability for broadband amplification
- Automotive-grade reliability qualification
Applications
- RF amplifier stages in communication systems
- Broadband signal processing circuits
- Automotive electronic modules requiring qualified components
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm exact electrical tolerances and packaging specifications. Confirm component status as obsolete or end-of-life prior to procurement planning. Ensure compatibility with existing supply chain constraints due to potential discontinuation.
Selection Notes
Select this component for designs requiring NPN silicon RF transistors with wideband characteristics. Verify that the 12 V collector-emitter voltage rating meets circuit requirements. Check thermal management needs against the 700 mW power dissipation limit. Ensure the SOT-343 package fits the board layout constraints.
Part Context
This part belongs to the BFP196 series of RF bipolar transistors from Infineon Technologies. It shares the core BFP196 architecture but differs in packaging and specific manufacturing lot codes compared to variants like BFP196WNH6327XTSA1. The series is targeted at high-frequency analog applications.
Replacement Considerations
Direct substitutes include BFP196WE6327HTSA1 and BFP196WH6327XTSA1. Verify pinout compatibility and specific parameter deviations before substitution.
