BFP196WNH6327XTSA1

$0.40

Description：RF TRANS NPN 12V 7.5GHZ SOT343-4
Series：-

SKU:5bb879fcd9ec Category: Bipolar RF Transistors Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 12V 7.5GHZ SOT343-4
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：12V
Frequency - Transition：7.5GHz
Noise Figure (dB Typ @ f)：1.3dB @ 900MHz
Gain：9.7dB
Power - Max：700mW
DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 50mA, 8V
Current - Collector (Ic) (Max)：150mA
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SC-82A, SOT-343
Supplier Device Package：PG-SOT343-4
Grade：-
Qualification：-

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BFP196WNH6327XTSA1

Overview

The BFP196WNH6327XTSA1 is an NPN silicon planar epitaxial RF transistor designed for low noise and low distortion wideband amplifiers. It features a transition frequency of 7.5 GHz, a maximum power dissipation of 700 mW, and a collector-emitter voltage rating of 12 V. The device operates within a temperature range of -55 °C to 150 °C and utilizes a 4-pin SOT343 package.

Feature Summary

NPN silicon planar epitaxial construction
Low noise and low distortion performance
Wideband amplifier suitability
RoHS compliant and halogen-free

Applications

GNSS active antenna systems
Amplifiers in antenna and telecommunications systems
CATV infrastructure
Power amplifiers for DECT and PCN systems

Procurement Notes

Verify the component against official Infineon documentation to confirm authenticity and revision status. Ensure handling precautions are observed due to ESD sensitivity. Confirm that the specific ordering code matches the required package and compliance standards before integration into production workflows.

Selection Notes

Select this component for applications requiring high-frequency operation up to 7.5 GHz with minimal signal degradation. Evaluate thermal resistance characteristics to ensure adequate heat dissipation within the 700 mW limit. Consider the SOT343 footprint constraints during PCB layout design to maintain optimal RF performance.

Part Context

This part belongs to the BFP196 series of low noise silicon bipolar RF transistors manufactured by Infineon Technologies. It is specifically engineered for high-voltage applications where VCE remains below 12 V. The series leverages Infineon's experience in RF components to provide stable volume production at benchmark quality levels.

Replacement Considerations

No direct public substitute part numbers are confirmed in the provided datasheet or source material. Designers should consult official replacement guides or contact Infineon directly for validated alternative components if supply constraints arise.