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The BFP405E6327BTSA1 is a low noise silicon bipolar RF transistor manufactured by Infineon Technologies. It operates with a maximum collector-emitter voltage of 4.5 V and a maximum collector current of 25 mA. The device features a transition frequency (fT) of 25 GHz at IC = 10 mA, VCE = 3 V. At 1.8 GHz, it achieves a minimum noise figure of 1.25 dB and a maximum stable gain of 23 dB. Total power dissipation is rated at 75 mW, with a junction temperature limit of 150 °C. It utilizes an SOT-343 package.
Verify the component against official Infineon documentation to confirm electrical parameters and package integrity. Ensure handling precautions are followed due to ESD sensitivity. Confirm that the specific ordering suffix matches the required reel or tape specifications for your manufacturing process.
Select this component when designing circuits requiring low noise performance at frequencies around 1.8 GHz. Consider the 4.5 V collector-emitter voltage limit and 25 mA maximum collector current constraints. Evaluate thermal management requirements given the 75 mW total power dissipation rating in the SOT-343 package.
This part belongs to the BFP405 series of low noise silicon bipolar RF transistors from Infineon Technologies. The series is characterized by its suitability for low current applications and oscillator designs. The specific model integrates standard RF performance metrics optimized for communication systems.
Consult official Infineon resources for verified substitute part numbers. Cross-reference electrical characteristics such as transition frequency, noise figure, and maximum ratings before implementing any alternative components.
The maximum stable gain (Gms) is 23 dB at 1.8 GHz.
The transition frequency is 25 GHz, measured at IC = 10 mA and VCE = 3 V.
The minimum noise figure (NFmin) is 1.25 dB at 1.8 GHz.