BFP405E6327BTSA1

BFP405E6327BTSA1

$0.37
  • Description:RF TRANS NPN 5V 25GHZ PG-SOT-343
  • Series:-

SKU:d9d63fcf2d49 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 5V 25GHZ PG-SOT-343
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):5V
  • Frequency - Transition:25GHz
  • Noise Figure (dB Typ @ f):1.25dB @ 1.8GHz
  • Gain:23dB
  • Power - Max:75mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 5mA, 4V
  • Current - Collector (Ic) (Max):25mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-82A, SOT-343
  • Supplier Device Package:PG-SOT343-3D
  • Grade:-
  • Qualification:-

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BFP405E6327BTSA1

Overview

The BFP405E6327BTSA1 is a low noise silicon bipolar RF transistor manufactured by Infineon Technologies. It operates with a maximum collector-emitter voltage of 4.5 V and a maximum collector current of 25 mA. The device features a transition frequency (fT) of 25 GHz at IC = 10 mA, VCE = 3 V. At 1.8 GHz, it achieves a minimum noise figure of 1.25 dB and a maximum stable gain of 23 dB. Total power dissipation is rated at 75 mW, with a junction temperature limit of 150 °C. It utilizes an SOT-343 package.

Feature Summary

  • Designed for low current applications and oscillators up to 12 GHz
  • Provides high stability with a maximum stable gain of 23 dB at 1.8 GHz
  • Features a low minimum noise figure of 1.25 dB at 1.8 GHz

Applications

  • Low current RF circuits
  • Oscillators operating up to 12 GHz

Procurement Notes

Verify the component against official Infineon documentation to confirm electrical parameters and package integrity. Ensure handling precautions are followed due to ESD sensitivity. Confirm that the specific ordering suffix matches the required reel or tape specifications for your manufacturing process.

Selection Notes

Select this component when designing circuits requiring low noise performance at frequencies around 1.8 GHz. Consider the 4.5 V collector-emitter voltage limit and 25 mA maximum collector current constraints. Evaluate thermal management requirements given the 75 mW total power dissipation rating in the SOT-343 package.

Part Context

This part belongs to the BFP405 series of low noise silicon bipolar RF transistors from Infineon Technologies. The series is characterized by its suitability for low current applications and oscillator designs. The specific model integrates standard RF performance metrics optimized for communication systems.

Replacement Considerations

Consult official Infineon resources for verified substitute part numbers. Cross-reference electrical characteristics such as transition frequency, noise figure, and maximum ratings before implementing any alternative components.

FAQ

What is the maximum stable gain of the BFP405 at 1.8 GHz?

The maximum stable gain (Gms) is 23 dB at 1.8 GHz.

What is the transition frequency (fT) specification?

The transition frequency is 25 GHz, measured at IC = 10 mA and VCE = 3 V.

What is the minimum noise figure at 1.8 GHz?

The minimum noise figure (NFmin) is 1.25 dB at 1.8 GHz.

BFP405E6327BTSA1BFP405E6327BTSA1
$0.37
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