BFP420E6327BTSA1

BFP420E6327BTSA1

$0.16
  • Description:RF TRANS NPN 5V 25GHZ PG-SOT-343
  • Series:-

SKU:939342668602 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 5V 25GHZ PG-SOT-343
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):5V
  • Frequency - Transition:25GHz
  • Noise Figure (dB Typ @ f):1.1dB @ 1.8GHz
  • Gain:21dB
  • Power - Max:160mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 20mA, 4V
  • Current - Collector (Ic) (Max):35mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-82A, SOT-343
  • Supplier Device Package:PG-SOT343-3D
  • Grade:-
  • Qualification:-

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BFP420E6327BTSA1

Overview

The BFP420E6327BTSA1 is a low noise silicon bipolar RF transistor manufactured by Infineon Technologies. It features a transition frequency (fT) of 25 GHz and a minimum noise figure (NFmin) of 1.1 dB at 1.8 GHz. The device provides an outstanding gain of 21 dB at 1.8 GHz and supports oscillators up to 10 GHz. Key electrical parameters include a collector-emitter breakdown voltage of 4.5 V, a maximum collector current of 60 mA, and a total power dissipation of 210 mW. It is housed in a Pb-free SOT-343 package.

Feature Summary

  • Designed for high gain and low noise amplifier applications
  • Capable of supporting oscillator circuits up to 10 GHz
  • Features a Pb-free and halogen-free package with visible leads

Applications

  • High gain amplifiers
  • Low noise amplifiers
  • Oscillators operating up to 10 GHz

Procurement Notes

Verify the component against the official Infineon datasheet Rev2013.pdf to confirm technical specifications. Ensure that the ordering suffix E6327BTSA1 matches the required packaging format. Confirm RoHS compliance and AEC-Q101 qualification status as documented in the manufacturer's release notes before finalizing procurement.

Selection Notes

Select this component when designing circuits requiring a transition frequency of 25 GHz and a noise figure of 1.1 dB at 1.8 GHz. Consider the 4.5 V collector-emitter breakdown voltage and 60 mA maximum collector current limits during biasing. Verify thermal management requirements against the 210 mW total power dissipation rating.

Part Context

This part belongs to the BFP420 series of low noise silicon bipolar RF transistors from Infineon Technologies. It utilizes standard silicon technology and is packaged in the SOT-343 form factor. The product line is designed specifically for radio frequency applications demanding high gain and minimal signal degradation.

Replacement Considerations

Consult the official Infineon documentation for verified substitute part numbers. Cross-reference specific pin configurations and electrical ratings to ensure compatibility with existing circuit designs.

FAQ

What is the transition frequency of the BFP420?

The transition frequency (fT) is 25 GHz.

What is the minimum noise figure at 1.8 GHz?

The minimum noise figure (NFmin) is 1.1 dB at 1.8 GHz.

What is the maximum collector current rating?

The maximum collector current (IC) is rated at 60 mA.

BFP420E6327BTSA1BFP420E6327BTSA1
$0.16
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