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The BFP420E6327BTSA1 is a low noise silicon bipolar RF transistor manufactured by Infineon Technologies. It features a transition frequency (fT) of 25 GHz and a minimum noise figure (NFmin) of 1.1 dB at 1.8 GHz. The device provides an outstanding gain of 21 dB at 1.8 GHz and supports oscillators up to 10 GHz. Key electrical parameters include a collector-emitter breakdown voltage of 4.5 V, a maximum collector current of 60 mA, and a total power dissipation of 210 mW. It is housed in a Pb-free SOT-343 package.
Verify the component against the official Infineon datasheet Rev2013.pdf to confirm technical specifications. Ensure that the ordering suffix E6327BTSA1 matches the required packaging format. Confirm RoHS compliance and AEC-Q101 qualification status as documented in the manufacturer's release notes before finalizing procurement.
Select this component when designing circuits requiring a transition frequency of 25 GHz and a noise figure of 1.1 dB at 1.8 GHz. Consider the 4.5 V collector-emitter breakdown voltage and 60 mA maximum collector current limits during biasing. Verify thermal management requirements against the 210 mW total power dissipation rating.
This part belongs to the BFP420 series of low noise silicon bipolar RF transistors from Infineon Technologies. It utilizes standard silicon technology and is packaged in the SOT-343 form factor. The product line is designed specifically for radio frequency applications demanding high gain and minimal signal degradation.
Consult the official Infineon documentation for verified substitute part numbers. Cross-reference specific pin configurations and electrical ratings to ensure compatibility with existing circuit designs.
The transition frequency (fT) is 25 GHz.
The minimum noise figure (NFmin) is 1.1 dB at 1.8 GHz.
The maximum collector current (IC) is rated at 60 mA.