SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BFP420E6433HTMA1 is a low noise silicon bipolar RF transistor manufactured by Infineon Technologies. It is designed for high gain and low noise amplifiers, oscillators up to 10 GHz, and broadband applications. The device features a transition frequency (fT) of 25 GHz at IC = 30 mA and VCE = 3 V. Key electrical parameters include a collector-emitter breakdown voltage (V(BR)CEO) of 4.5 V, a maximum collector current (IC) of 60 mA, and a total power dissipation (Ptot) of 210 mW. At 1.8 GHz, it achieves a minimum noise figure (NFmin) of 1.1 dB and an outstanding maximum stable gain (Gms) of 21 dB.
Verify the component authenticity against the official Infineon datasheet specifications before integration. Confirm that the SOT343 package pinout matches the design requirements: Pin 1 is Base, Pin 2 is Emitter, Pin 3 is Collector, and Pin 4 is Emitter. Ensure handling precautions are observed due to electrostatic discharge sensitivity.
Select this component when designing circuits requiring a transition frequency of 25 GHz and a low noise figure of 1.1 dB at 1.8 GHz. Consider the 4.5 V collector-emitter breakdown voltage limit and the 210 mW power dissipation capability. Verify biasing conditions against the provided DC characteristics and thermal resistance data for optimal performance.
This part belongs to the BFP420 series of low noise silicon bipolar RF transistors from Infineon Technologies. It utilizes the SOT343 surface-mount package with visible leads. The device is Pb-free, RoHS compliant, and halogen-free. A qualification report according to AEC-Q101 is available for automotive or industrial reliability standards.
Consult the official Infineon documentation for verified substitute part numbers. No specific replacement models are confirmed in the provided source material.
The transition frequency is 25 GHz, measured at IC = 30 mA and VCE = 3 V.
The minimum noise figure (NFmin) is 1.1 dB at 1.8 GHz, measured at IC = 5 mA and VCE = 2 V.
The maximum collector current (IC) is rated at 60 mA.