BFP450E6433BTMA1

Overview

The BFP450E6433BTMA1 is a high-frequency NPN silicon RF transistor manufactured by Infineon Technologies. It is designed for broadband applications in the VHF and UHF frequency ranges, offering high gain and low noise performance. The device is housed in a compact SOT-363 surface-mount package, facilitating integration into space-constrained circuit designs. Key electrical specifications include a maximum collector-emitter voltage (Vceo) of 2.5 V and a maximum DC collector current (Ic) of 80 mA. The transistor features a transition frequency (fT) exceeding 10 GHz, making it suitable for amplification tasks in wireless communication systems.

Feature Summary

• Optimized for low-noise amplification in VHF and UHF bands
• High transition frequency supporting broadband RF signal processing
• Compact SOT-363 package for efficient PCB layout

Applications

• Low-noise amplifier stages in mobile handsets
• RF front-end modules in wireless communication devices
• Broadband amplification in test and measurement equipment

Procurement Notes

Verify the complete ordering part number against official Infineon documentation to ensure correct suffix alignment. Confirm RoHS compliance status and material content declarations via the manufacturer's data sheet. Cross-reference the specific batch code with quality certificates if required for automotive or medical certifications. Ensure storage conditions adhere to moisture sensitivity level ratings specified in the handling guidelines.

Selection Notes

Select this component when designing circuits requiring high-frequency performance with minimal noise figure in the VHF/UHF spectrum. Evaluate the thermal resistance characteristics of the SOT-363 package against the expected power dissipation in the target application. Compare the fT specification with the operating frequency to ensure adequate gain margins. Consider the low supply voltage requirement of 2.5 V when designing power management sections for battery-operated portable devices.

Part Context

This transistor belongs to Infineon's portfolio of high-frequency silicon RF components. It complements other BFR series devices by providing optimized performance for ultra-low voltage applications. The BFP450E variant specifically targets cost-sensitive consumer electronics markets while maintaining robust RF characteristics. It serves as a foundational active element in modern wireless infrastructure and handheld communication hardware.

Replacement Considerations

Consult official Infineon substitution guides for direct pin-compatible alternatives. Verify that any substitute maintains equivalent fT, noise figure, and package dimensions. Ensure thermal and electrical ratings meet or exceed original specifications.