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The BFP520FE6327 is an NPN silicon RF bipolar transistor from the Infineon BFP520 series, designed for Ku-band applications. It features a maximum collector-emitter voltage of 2.5 V and a maximum collector current of 40 mA. The device utilizes a TSFP-4 surface-mount package with four terminals. Key electrical characteristics include a maximum collector-base capacitance of 0.14 pF. The component is AEC-Q100 qualified, ensuring high reliability for automotive environments.
Verify the specific suffix 'E6327' against official Infineon documentation to confirm exact tape-and-reel specifications and RoHS compliance status. Cross-reference the part number with authorized distributors to ensure authenticity and traceability, as suffix variations may indicate different packaging or material compositions.
Select this component when designing Ku-band circuits requiring an NPN silicon RF transistor with automotive qualification. Ensure the design accommodates the 2.5 V maximum collector-emitter voltage limit. Compare thermal dissipation requirements against the TSFP-4 package capabilities for the intended operating environment.
This part belongs to the BFP520 family of RF bipolar transistors manufactured by Infineon Technologies. The family includes variants such as BFP520FH6327XTSA1, which shares similar functional characteristics but may differ in packaging or suffix codes. These devices are engineered for high-frequency analog applications.
Direct substitutes within the same family include BFP520FH6327XTSA1. Verify pinout compatibility and electrical parameter equivalence before substitution. Consult Infineon's official cross-reference guides for approved alternative part numbers.