BFP540E6327BTSA1

Overview

The BFP540E6327BTSA1 is a silicon NPN radio frequency bipolar junction transistor manufactured by Infineon Technologies. It operates with a maximum collector-emitter voltage of 5V and a continuous collector current of 80mA. The device features a transition frequency of 30GHz and a maximum power dissipation of 250mW. DC current gain is specified at a minimum of 50 when tested at 20mA and 3.5V. Noise performance ranges from 0.9dB to 1.4dB at 1.8GHz, with a typical gain of 21.5dB. It is housed in a PG-SOT343-3D surface-mount package and supports a maximum junction temperature of 150°C.

Feature Summary

• High-frequency operation capability up to 30GHz for RF signal processing
• Low noise figure characteristics suitable for sensitive receiver stages
• Compact SMD packaging designed for automated surface-mount assembly

Applications

• RF amplification in wireless communication systems
• Signal processing in mobile phone front-end modules
• Broadband amplifier circuits requiring high transition frequencies

Procurement Notes

This component has reached end-of-life status and is no longer manufactured by the original producer. Verification of availability requires checking authorized distributors for remaining stock or obsolete inventory. Buyers must confirm the authenticity of existing units through official traceability documentation before acquisition.

Selection Notes

Designers should evaluate alternative components due to the discontinued production status of this specific part number. Compatibility checks are necessary if substituting with similar RF transistors, ensuring that voltage ratings, current limits, and package dimensions match the original circuit requirements without altering board layout constraints.

Part Context

This part belongs to the BFP540 series of RF bipolar transistors produced by Infineon Technologies. The suffix E6327BTSA1 indicates specific packaging and ordering variants within the manufacturer's standard catalog. It represents a specialized discrete semiconductor component intended for high-performance analog and RF applications rather than general-purpose switching.

Replacement Considerations

Publicly confirmed substitute part numbers include Toshiba Semiconductor and Storage 2SC2714-O(TE85L,F) and Renesas Electronics Corporation HFA3102BZ. These alternatives should be evaluated against original electrical specifications to ensure functional equivalence in the target application.