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The BFP540ESDE6327HTSA1 is an NPN silicon RF bipolar junction transistor manufactured by Infineon Technologies. It is designed for high-frequency applications with a transition frequency of 30 GHz and a maximum collector-emitter voltage of 4.5 V. The device supports a continuous collector current of 80 mA and dissipates up to 250 mW of power. It features a low noise figure ranging from 0.9 dB to 1.4 dB at 1.8 GHz and provides a gain of 21.5 dB. The component is housed in a PG-SOT343-3D surface-mount package, suitable for compact RF circuit designs.
Verify the exact part number against official Infineon documentation, as suffixes indicate specific tape-and-reel configurations or manufacturing variants. Confirm availability status, as this component may be subject to end-of-life notices or discontinuation. Ensure compatibility with existing PCB footprints and thermal management requirements before procurement.
Select this component when designing circuits requiring high transition frequencies and low noise figures within a small form factor. Compare specifications such as Vceo, Ic max, and noise figure against alternative RF transistors to ensure suitability for the target frequency band and power constraints. Verify package dimensions match the design layout.
This part belongs to the BFP540 series of RF bipolar transistors from Infineon Technologies. The series is characterized by high-speed performance and low noise, making it suitable for various radio frequency applications. The specific suffix denotes the packaging and ordering variant.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult Infineon's official replacement guides or distributor databases for equivalent components if this part is discontinued.