BFP620H7764XTSA1

Overview

The BFP620H7764XTSA1 is a surface-mount high linearity silicon NPN RF bipolar transistor based on SiGe:C technology. It belongs to Infineon’s sixth-generation transistor family and is housed in an SOT343 package with four pins (Pin 1: Base, Pin 2: Emitter, Pin 3: Collector, Pin 4: Emitter). The device is qualified for industrial applications per JEDEC standards and AEC-Q101. Key electrical parameters include a transition frequency of 65 GHz at VCE = 1.5 V and IC = 50 mA, a minimum noise figure of 0.7 dB at 1.8 GHz, and a maximum power gain of 21.5 dB at 1.8 GHz. Absolute maximum ratings specify a collector-emitter voltage of 2.3 V, a total power dissipation of 185 mW, and a junction temperature limit of 150 °C.

Feature Summary

• High linearity characteristics optimized for wireless communication applications
• Low noise figure performance suitable for sensitive receiver front-ends
• SiGe:C technology providing cost-effective ease of use

Applications

• Low noise amplifiers (LNAs) in SDARS receivers
• LNAs for general wireless communications
• LNAs for ISM band applications

Procurement Notes

Verify the specific ordering code BFP620H7764XTSA1 against official Infineon documentation to confirm current production status and availability. Ensure that handling procedures strictly adhere to ESD sensitivity warnings provided in the datasheet. Confirm that the SOT343 package dimensions align with the intended PCB footprint requirements before finalizing procurement decisions.

Selection Notes

Select this component when designing circuits requiring high linearity and low noise figures in the RF spectrum. The SiGe:C technology offers a balance between performance and cost. Verify that the operating conditions remain within the absolute maximum ratings, particularly regarding the 2.3 V collector-emitter voltage limit and the 185 mW power dissipation constraint under specified thermal conditions.

Part Context

This part is a variant of the BFP620 series from Infineon Technologies. The suffix H7764XTSA1 indicates the specific packaging and reel configuration for mass production. It is designed as a surface-mount device compatible with standard automated assembly processes. The device represents the sixth generation of Infineon's established transistor family, focusing on improved linearity and noise performance for modern wireless standards.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided source material.