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Product Detailed Parameters
- Description：RF TRANS NPN 4.5V 37GHZ SOT-343
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：4.5V
- Frequency - Transition：37GHz
- Noise Figure (dB Typ @ f)：0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
- Gain：10.5dB ~ 21.5dB
- Power - Max：500mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：110 @ 80mA, 3V
- Current - Collector (Ic) (Max)：150mA
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：SC-82A, SOT-343
- Supplier Device Package：PG-SOT343-3D
- Grade：-
- Qualification：-
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Overview
The BFP650 is a high linearity wideband silicon NPN RF bipolar transistor based on SiGe:C technology. It features a transition frequency (fT) of 42 GHz and operates at frequencies up to 5 GHz. Key electrical parameters include a minimum noise figure (NFmin) of 1 dB at 2.4 GHz with 3 V supply and 30 mA collector current, and a maximum power gain (Gma) of 17.5 dB under the same conditions at 70 mA. The device achieves an output third-order intercept point (OIP3) of 30 dBm at 2.4 GHz. Absolute maximum ratings specify a collector-emitter voltage (VCEO) of 4.0 V and total power dissipation of 500 mW.
Feature Summary
- Utilizes sixth-generation SiGe:C technology for high linearity and low noise performance.
- Provides high transition frequency suitable for broadband applications up to 5 GHz.
- Optimized for energy efficiency through excellent linearity characteristics at low bias currents.
Applications
- Low noise, high linearity amplifiers in SDARS receivers
- Low noise, high linearity amplifiers for ISM band applications
- Low noise, high linearity amplifiers for multimedia applications such as CATV
Procurement Notes
Verify the specific ordering code suffix against the manufacturer's official documentation to ensure correct package and tape-and-reel specifications. Confirm that the component meets AEC-Q101 qualification requirements if automotive compliance is necessary for the intended design environment.
Selection Notes
Select this component when designing circuits requiring high linearity and low noise figures at frequencies up to 5 GHz. Ensure the operating collector current aligns with the specified bias points for optimal noise or gain performance. Verify thermal management capabilities to maintain junction temperature within the absolute maximum rating limits during operation.
Part Context
The BFP650 belongs to Infineon’s established sixth-generation transistor family. It is designed to offer cost-competitive solutions without compromising ease of use. The device is qualified for industrial applications according to JEDEC JESD47, JESD22, and J-STD-020 standards.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material.
FAQ
What is the transition frequency (fT) of the BFP650?
The transition frequency (fT) is 42 GHz, measured at VCE = 3 V and IC = 70 mA.
What is the maximum collector-emitter voltage (VCEO)?
The maximum collector-emitter voltage (VCEO) is 4.0 V with the base open.
Is the BFP650 qualified for automotive applications?
Yes, the device is qualified for industrial applications according to AEC-Q101 standards.
