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Product Detailed Parameters
- Description：RF TRANS NPN 4.7V 45GHZ SOT-343
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：4.7V
- Frequency - Transition：45GHz
- Noise Figure (dB Typ @ f)：0.4dB ~ 0.95dB @ 150MHz ~ 10GHz
- Gain：10.5dB ~ 28.5dB
- Power - Max：100mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：160 @ 13mA, 3V
- Current - Collector (Ic) (Max)：25mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-82A, SOT-343
- Supplier Device Package：PG-SOT343-4-2
- Grade：-
- Qualification：-
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Overview
The BFP720H6327XTSA1 is an NPN silicon RF bipolar transistor from Infineon Technologies, designed for high-frequency applications up to 43 GHz. It operates with a collector-emitter voltage of 4.2 V and supports a continuous collector current of 30 mA. The device features a DC current gain (hFE) minimum of 160 and dissipates up to 100 mW of power. Packaged in a compact SOT-343 surface-mount format, it meets AEC-Q100 automotive qualification standards. This component is suitable for wireless communication systems requiring reliable RF signal amplification within the specified frequency range.
Feature Summary
- High-frequency operation capability up to 43 GHz
- Automotive-grade reliability via AEC-Q100 qualification
- Compact SOT-343 surface-mount packaging
Applications
- RF signal amplification in wireless communication modules
- High-frequency oscillator circuits
- Automotive radar sensor front-ends
Procurement Notes
Verify the specific suffix H6327XTSA1 against official Infineon documentation to confirm package type and tape-and-reel specifications. Confirm end-of-life status or obsolescence notices before finalizing procurement plans. Ensure compatibility with existing PCB footprints for the SOT-343 package. Check for any recent design-win restrictions or recommended replacement guidelines issued by the manufacturer.
Selection Notes
Select this component when designing circuits requiring NPN bipolar transistors with high cutoff frequencies around 43 GHz. Consider the 4.2 V maximum collector-emitter voltage limit for low-voltage supply designs. Evaluate the 100 mW power dissipation constraint for thermal management in dense layouts. Verify that the AEC-Q100 qualification aligns with automotive application requirements.
Part Context
This part belongs to the BFP720 series of RF bipolar transistors manufactured by Infineon Technologies. The series is engineered for high-performance radio frequency applications. The H6327XTSA1 suffix indicates specific packaging and handling characteristics consistent with Infineon's standard reel and cut-tape distribution methods for surface-mount devices.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult Infineon's official cross-reference tools or datasheets for potential alternatives if this component is discontinued or unavailable.
