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The BFP760H6327XTSA1 is a SiGe:C NPN RF heterojunction bipolar transistor (HBT) manufactured by Infineon Technologies. It operates in the SOT343 surface-mount package with four pins, where pin 1 is Base, pin 2 is Emitter, pin 3 is Collector, and pin 4 is an additional Emitter connection. The device supports a maximum collector-emitter voltage of 4.0 V and a continuous collector current of 70 mA. It features a transition frequency of 45 GHz at 3 V and 35 mA. Key performance metrics include a minimum noise figure of 0.95 dB at 5.5 GHz and a maximum power gain of 16.5 dB under identical conditions.
Verify component authenticity through official manufacturer channels or authorized distributors. Confirm that the ordering code matches BFP760H6327XTSA1 exactly. Ensure handling procedures account for electrostatic discharge sensitivity. Check for RoHS compliance documentation if required by local regulations. Validate packaging integrity upon receipt to prevent physical damage to the SOT343 leads.
Select this component when designing circuits requiring low noise figures and high linearity in the 0.9 GHz to 5.5 GHz range. Consider the 4.0 V collector-emitter voltage limit when determining biasing networks. Evaluate thermal resistance requirements based on the total power dissipation limits specified in the datasheet. Ensure the PCB footprint aligns with the SOT343 package dimensions provided in the official documentation.
This part belongs to Infineon's portfolio of SiGe:C RF bipolar transistors designed for wireless infrastructure and mobile devices. The H6327 suffix indicates specific tape-and-reel packaging containing 3000 pieces per reel. It serves as a specialized active component for signal amplification and processing in modern communication standards.
No direct public substitute part numbers are confirmed in the available documentation. Designers should consult official replacement guides or contact technical support for cross-reference information before modifying existing circuit layouts.