BFP780H6327XTSA1

BFP780H6327XTSA1

  • Description:RF TRANS NPN 6.1V 900MHZ SOT-343
  • Series:-

SKU:95e20c15cbd9 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF TRANS NPN 6.1V 900MHZ SOT-343
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):6.1V
  • Frequency - Transition:900MHz
  • Noise Figure (dB Typ @ f):1.2dB ~ 2.4dB @ 900MHz ~ 3.5GHz
  • Gain:27dB
  • Power - Max:600mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:85 @ 90mA, 5V
  • Current - Collector (Ic) (Max):120mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-82A, SOT-343
  • Supplier Device Package:PG-SOT343-4-1
  • Grade:-
  • Qualification:-

Download product information

BFP780H6327XTSA1

Overview

The BFP780H6327XTSA1 is an NPN silicon bipolar RF transistor manufactured by Infineon Technologies. It is designed for high-frequency applications with a maximum collector-emitter breakdown voltage of 6.1V and a continuous collector current of 120mA. The device supports a maximum power dissipation of 600mW and operates up to a frequency of 900MHz. It utilizes a surface-mount PG-SOT343-4-1 package, suitable for automated assembly processes.

Feature Summary

  • NPN bipolar junction transistor architecture optimized for radio frequency signal processing
  • High-speed operation capability supporting frequencies up to 900MHz
  • Robust power handling with 600mW dissipation rating in compact surface-mount form factor

Applications

  • RF amplifier stages in communication systems
  • Signal conditioning circuits in wireless transceivers
  • General-purpose radio frequency switching applications

Procurement Notes

Verify component authenticity through authorized distribution channels due to obsolete status. Confirm package integrity upon receipt as the SOT-343-4-1 housing is sensitive to mechanical stress. Ensure storage conditions meet manufacturer specifications to prevent degradation of the silicon die before installation.

Selection Notes

Select this component when designing circuits requiring NPN topology with specific 6.1V breakdown limits. Consider the 900MHz operational ceiling against system bandwidth requirements. Evaluate the 600mW thermal dissipation capacity relative to the PCB layout's heat spreading capabilities for reliable long-term performance.

Part Context

This part belongs to the BFP series of RF bipolar transistors from Infineon Technologies. It represents a specialized discrete semiconductor solution distinct from integrated MMICs or general-purpose logic devices. The designation indicates a specific pinout and electrical characteristic set tailored for RF engineering constraints.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Due to the obsolete product status, direct cross-referencing requires consulting official replacement guides or engineering change notices from the manufacturer.

BFP780H6327XTSA1BFP780H6327XTSA1

Click on the inquiry