SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BFP780H6327XTSA1 is an NPN silicon bipolar RF transistor manufactured by Infineon Technologies. It is designed for high-frequency applications with a maximum collector-emitter breakdown voltage of 6.1V and a continuous collector current of 120mA. The device supports a maximum power dissipation of 600mW and operates up to a frequency of 900MHz. It utilizes a surface-mount PG-SOT343-4-1 package, suitable for automated assembly processes.
Verify component authenticity through authorized distribution channels due to obsolete status. Confirm package integrity upon receipt as the SOT-343-4-1 housing is sensitive to mechanical stress. Ensure storage conditions meet manufacturer specifications to prevent degradation of the silicon die before installation.
Select this component when designing circuits requiring NPN topology with specific 6.1V breakdown limits. Consider the 900MHz operational ceiling against system bandwidth requirements. Evaluate the 600mW thermal dissipation capacity relative to the PCB layout's heat spreading capabilities for reliable long-term performance.
This part belongs to the BFP series of RF bipolar transistors from Infineon Technologies. It represents a specialized discrete semiconductor solution distinct from integrated MMICs or general-purpose logic devices. The designation indicates a specific pinout and electrical characteristic set tailored for RF engineering constraints.
Public confirmed substitute part numbers are not available in the provided documentation. Due to the obsolete product status, direct cross-referencing requires consulting official replacement guides or engineering change notices from the manufacturer.