BFP842ESDH6327XTSA1

Overview

The BFP842ESDH6327XTSA1 is a SiGe:C NPN RF heterojunction bipolar transistor (HBT) with integrated ESD protection, designed for 2.3–3.5 GHz LNA applications. It features a transition frequency of 57 GHz and supports low voltage operation at VCC = 1.2 V and 1.8 V. Key electrical parameters include a collector-emitter breakdown voltage of 3.25 V, maximum collector current of 40 mA, and total power dissipation of 120 mW. At 3.5 GHz with VCE = 2.5 V and IC = 15 mA, it achieves a maximum power gain of 17.5 dB, an output third-order intercept point (OIP3) of 25.5 dBm, and a minimum noise figure of 0.65 dB.

Feature Summary

• Integrated electrostatic discharge (ESD) protection providing robustness against 1 kV HBM stress pulses across all pins.
• High transition frequency enabling superior noise performance and high gain in the 2.3 to 3.5 GHz frequency range.
• Low voltage compatibility suitable for direct integration into 1.2 V and 1.8 V supply architectures.

Applications

• Wireless communications including WLAN, WiMAX, and Bluetooth systems
• Satellite communication systems such as GNSS navigation receivers and satellite radio
• Multimedia applications like mobile TV and FM radio tuners

Procurement Notes

Verify component authenticity by cross-referencing the ordering code BFP842ESDH6327XTSA1 with official Infineon documentation. Confirm package type SOT343 and pin configuration matches design requirements. Ensure handling procedures account for ESD sensitivity during assembly and storage.

Selection Notes

Select this component for designs requiring high linearity and low noise in compact form factors. Evaluate thermal resistance characteristics for heat dissipation within the SOT343 package. Verify biasing conditions align with specified DC operating points for optimal AC performance metrics.

Part Context

This device belongs to the BFP842ESD series of SiGe:C RF transistors manufactured by Infineon Technologies. It is specifically engineered to combine high-end RF performance with enhanced robustness against electrostatic discharge events, making it suitable for portable consumer electronics.

Replacement Considerations

Consult official Infineon documentation for qualified substitute part numbers. Verify that any replacement maintains equivalent pinout, package dimensions, and electrical specifications to ensure circuit compatibility without redesign.

FAQ

What is the maximum RF input power rating?

The absolute maximum RF input power rating is 16 dBm.

How does the device handle electrostatic discharge?

It includes integrated ESD protection capable of withstanding 1 kV Human Body Model (HBM) stress pulses on all pins.

What is the typical DC current gain?

The typical DC current gain (hFE) is 260 when measured at VCE = 2.5 V and IC = 15 mA.